Semiconductor Group
1
PNP Silicon Darlington Transistor
BC 516
5.91
Maximum Ratings
Type
Ordering Code
Marking
Package
1)
Pin Configuration
BC 516
Q62702-C944
TO-92
1
2
3
C
B
E
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
30
V
Peak collector current
I
CM
800
Base current
I
B
100
Collector current
I
C
500
mA
Junction temperature
T
j
150
C
Total power dissipation,
T
C
= 66 C
P
tot
625
mW
Storage temperature range
T
stg
65 ... + 150
Collector-base voltage
V
CB0
40
Thermal Resistance
Junction - ambient
R
th JA
200
K/W
Emitter-base voltage
V
EB0
10
Peak base current
I
BM
200
Junction - case
2)
R
th JC
135
1)
For detailed information see chapter Package Outlines.
2)
Mounted on Al heat sink 15 mm
25 mm
0.5 mm.
q
High current gain
q
High collector current
q
Complementary type: BC 517 (NPN)
1
2
3
Semiconductor Group
2
BC 516
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
V
Collector-emitter breakdown voltage
I
C
= 10 mA
V
(BR)CE0
30
Collector-base breakdown voltage
I
C
= 100
A
V
(BR)CB0
40
DC current gain
I
C
= 20 mA;
V
CE
= 2 V
h
FE
30 000
MHz
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 20 MHz
f
T
200
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
AC characteristics
Emitter-base breakdown voltage
I
E
= 10
A
V
(BR)EB0
10
nA
A
Collector cutoff current
V
CB
= 30 V
V
CB
= 30 V,
T
A
= 150 C
I
CB0
100
10
A
Emitter cutoff current
V
EB
= 4 V
I
EB0
100
V
Collector-emitter saturation voltage
1)
I
C
= 100 mA;
I
B
= 0.1 mA
V
CEsat
1
Base-emitter voltage
1)
I
C
= 10 mA;
V
CE
= 5 V
V
BE
1.4
pF
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
3.5
1)
Pulse test:
t
300
s,
D
2 %.
PDF 
ZIP
