Semiconductor Group
1
Silicon Schottky Diodes
BAT 14- ... D
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings
Type
Ordering Code
Marking
Package
1)
Pin Configuration
BAT 14-020 D
Q62702-D1259
D
BAT 14-050 D
Q62702-D1268
BAT 14-090 D
Q62702-D1276
BAT 14-110 D
Q62702-D1285
Parameter
Symbol
Unit
Reverse voltage
V
R
4
V
Junction temperature
T
j
175
C
T
stg
65 ... + 150
Forward current
I
F
100
mA
Storage temperature range
Operating temperature range
T
op
65 ... + 150
Values
4
50
BAT 14-020 D
BAT 14-050 D
BAT 14-090 D
BAT 14-110 D
1)
For detailed information see chapter Package Outlines.
q
Beam lead technology
q
Low dimension
q
High performance
q
Medium barrier
Semiconductor Group
2
BAT 14- ... D
BAT 14- ...D
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
V
Breakdown voltage
I
R
= 10
A
V
(BR)
4
pF
Diode capacitance
V
R
= 0,
f
= 1 MHz
BAT 14-020 D
BAT 14-050 D
BAT 14-090 D
BAT 14-110 D
C
T
0.30
0.20
0.14
0.10
0.35
0.25
0.15
0.12
V
Forward voltage
I
F
= 1 mA
BAT 14-020 D
BAT 14-050 D
BAT 14-090 D
BAT 14-110 D
I
F
= 10 mA
BAT 14-020 D
BAT 14-050 D
BAT 14-090 D
BAT 14-110 D
V
F
0.45
0.47
0.49
0.50
0.55
0.57
0.60
0.65
dB
Single sideband noise figure
F
IF
= 1.5 dB,
P
LO
= 0 dBm,
f
IF
= 10.7 MHz
f
= 3.0 GHz
BAT 14-020 D
f
= 6.0 GHz
BAT 14-050 D
f
= 9.3 GHz
BAT 14-090 D
f
= 16 GHz
BAT 14-110 D
F
SSB
6.0
6.5
6.5
7.0
Differential forward resistance
I
F
= 10 mA
BAT 14-020 D
BAT 14-050 D
I
F
= 50 mA
BAT 14-090 D
BAT 14-110 D
r
f
3.5
4.0
7.0
10.0
DC Characteristics
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