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Электронный компонент: Q62702-D1316

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Semiconductor Group
1
Silicon Schottky Diodes
BAS 125 ...
q
For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
q
Integrated diffused guard ring
q
Low forward voltage
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BAS 125
Q62702-D1316
13
SOT-23
BAS 125-04
Q62702-D1321
14
BAS 125-05
Q62702-D1322
15
BAS 125-06
Q62702-D1323
16
1)
For detailed information see chapter Package Outlines.
02.96
Semiconductor Group
2
BAS 125 ...
q
For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
q
Integrated diffused guard ring
q
Low forward voltage
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings per Diode
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
SOT-143
BAS 125-07
Q62702-D1327
17
Thermal Resistance
Junction - ambient
2)
R
th JA
725
K/W
Junction - soldering point
R
th JS
565
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
25
V
Forward current
I
F
100
mA
Junction temperature
T
j
150
C
Storage temperature range
T
stg
55 ... + 150
Total power dissipation,
T
S
25 C
3)
P
tot
250
mW
Surge forward current,
t
10 ms
I
FSM
500
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm
16.7 mm
0.7 mm.
3)
450 mW per package.
Semiconductor Group
3
BAS 125 ...
Electrical Characteristics per Diode
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
A
Reverse current
V
R
= 20 V
V
R
= 25 V
I
R


1
10
mV
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 35 mA
V
F


385
530
800
410

900
Differential forward resistance
I
F
= 5 mA,
f
= 10 kHz
R
F
15
pF
Diode capacitance
V
R
= 0,
f
= 1 MHz
C
T
1.1
Semiconductor Group
4
BAS 125 ...
Forward current
I
F
=
f
(
V
F
)
Forward current
I
F
=
f
(
T
S
; T
A
*)
*Package mounted on alumina
BAS 125
Forward current
I
F
=
f
(
T
S
; T
A
*)
*Package mounted on alumina
BAS 125-04, -05, -06, -07
Reverse current
I
R
=
f
(
V
R
)
Semiconductor Group
5
BAS 125 ...
Diode capacitance
C
T
=
f
(
V
R
)
f
= 1 MHz
Differential forward resistance
R
F
=
f
(
I
F
)
f
= 10 kHz