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Электронный компонент: Q62702-D1336

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Semiconductor Group
1
Nov-28-1996
BDP 948
PNP Silicon AF Power Transistor
For AF drivers and output stages
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary type: BDP947, BDP949 (NPN)
Type
Marking Ordering Code
Pin Configuration
Package
BDP 948
BDP 948 Q62702-D1336
1 = B
2 = C
3 = E
4 = C
SOT-223
BDP 950
BDP 950 Q62702-D1338
1 = B
2 = C
3 = E
4 = C
SOT-223
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
BDP 948
BDP 950
V
CEO
60
45
V
Collector-base voltage
BDP 948
BDP 950
V
CBO
60
45
Emitter-base voltage
V
EBO
5
DC collector current
I
C
3
A
Peak collector current
I
CM
5
Base current
I
B
200
mA
Peak base current
I
BM
500
Total power dissipation,
T
S
= 99C
P
tot
3
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
42
K/W
Junction - soldering point
R
thJS
17
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm
2
Cu
Semiconductor Group
2
Nov-28-1996
BDP 948
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0 mA, BDP 948
I
C
= 10 mA,
I
B
= 0 mA, BDP 950
V
(BR)CEO
60
45
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 100 A,
I
B
= 0 , BDP 948
I
C
= 100 A,
I
B
= 0 , BDP 950
V
(BR)CBO
60
45
-
-
-
-
Base-emitter breakdown voltage
I
E
= 10 A,
I
C
= 0
V
(BR)EBO
5
-
-
Collector cutoff current
V
CB
= 45 V,
I
E
= 0 ,
T
A
= 25 C
V
CB
= 45 V,
I
E
= 0 ,
T
A
= 150 C
I
CBO
-
-
-
-
20
100
nA
A
Emitter cutoff current
V
EB
= 4 V,
I
C
= 0
I
EBO
-
-
100
nA
DC current gain
I
C
= 10 mA,
V
CE
= 5 V
I
C
= 500 mA,
V
CE
= 1 V
I
C
= 1 A,
V
CE
= 2 V
h
FE
50
85
25
-
-
-
-
475
-
-
Collector-emitter saturation voltage 1)
I
C
= 2 A,
I
B
= 0.2 A
V
CEsat
-
-
0.5
V
Base-emitter saturation voltage 1)
I
C
= 2 A,
I
B
= 0.2 A
V
BEsat
-
-
1.3
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 10 V,
f = 100 MHz
f
T
-
100
-
MHz
Collector-base capacitance
V
CB
= 10 V,
f = 1 MHz
C
cb
-
40
-
pF
1) Pulse test: t < 300
s; D < 2%
Semiconductor Group
3
Nov-28-1996
BDP 948
Total power dissipation
P
tot
=
f (T
A
*;
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C 150
T
A
,T
S
0.0
0.4
0.8
1.2
1.6
2.0
2.4
W
3.2
P
tot
T
S
T
A
Permissible Pulse Load
R
thJS
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
-2
10
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
P
totmax
/
P
totDC
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
0
10
1
10
2
10
3
10
-
P
totmax
/
P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
DC current gain
h
FE
=
f (I
C
)
V
CE
= 2V
10
0
10
1
10
2
10
3
mA
I
C
0
10
1
10
2
10
3
10
-
h
FE
-50C
25C
100C
Semiconductor Group
4
Nov-28-1996
BDP 948
Collector cutoff current
I
CBO
=
f (T
A
)
V
CB
= 45V
0
20
40
60
80
100
120 C 150
T
A
-1
10
0
10
1
10
2
10
3
10
4
10
5
10
nA
I
CBO
max
typ
Collector-emitter saturation voltage
I
C
= f (
V
CEsat
),
h
FE
= 10
0.0
0.1
0.2
0.3
V
0.5
V
CEsat
0
10
1
10
2
10
3
10
4
10
mA
I
C
-50C
25C
100C
Base-emitter saturation voltage
I
C
= f (
V
BEsat
),
h
FE
= 10
0.0
0.2
0.4
0.6
0.8
1.0
V
1.3
V
BEsat
0
10
1
10
2
10
3
10
4
10
mA
I
C
-50C
25C
100C
Collector current
I
C
=
f (V
BE
)
V
CE
= 2V
0.0
0.2
0.4
0.6
0.8
1.0
V
1.3
V
BE
0
10
1
10
2
10
3
10
4
10
mA
I
C
-50C
25C
100C