Semiconductor Group
1
Nov-28-1996
BDP 951
NPN Silicon AF Power Transistors
For AF drivers and output stages
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary type: BDP952...BDP956 (PNP)
Type
Marking Ordering Code
Pin Configuration
Package
BDP 951
BDP 951 Q62702-D1339
1 = B
2 = C
3 = E
4 = C
SOT-223
BDP 953
BDP 953 Q62702-D1341
1 = B
2 = C
3 = E
4 = C
SOT-223
BDP 955
PDP 955 Q62702-D1343
1 = B
2 = C
3 = E
4 = C
SOT-223
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
BDP 951
BDP 953
BDP 955
V
CEO
120
100
80
V
Collector-base voltage
BDP 951
BDP 953
BDP 955
V
CBO
140
120
100
Emitter-base voltage
V
EBO
5
DC collector current
I
C
3
A
Peak collector current
I
CM
5
Base current
I
B
200
mA
Peak base current
I
BM
500
Total power dissipation,
T
S
= 99C
P
tot
3
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
42
K/W
Junction - soldering point
R
thJS
17
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm
2
Cu
Semiconductor Group
2
Nov-28-1996
BDP 951
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0 mA, BDP 951
I
C
= 10 mA,
I
B
= 0 mA, BDP 953
I
C
= 10 mA,
I
B
= 0 mA, BDP 955
V
(BR)CEO
120
100
80
-
-
-
-
-
-
V
Collector-base breakdown voltage
I
C
100 A,
I
B
= 0 , BDP 951
I
C
= 100 A,
I
B
= 0 , BDP 953
I
C
= 100 A,
I
B
= 0 , BDP 955
V
(BR)CBO
140
120
100
-
-
-
-
-
-
Base-emitter breakdown voltage
I
E
= 10 A,
I
C
= 0
V
(BR)EBO
5
-
-
Collector cutoff current
V
CB
= 100 V,
I
E
= 0 ,
T
A
= 25 C
V
CB
= 100 V,
I
E
= 0 ,
T
A
= 150 C
I
CBO
-
-
-
-
20
100
nA
A
Emitter cutoff current
V
EB
= 4 V,
I
C
= 0
I
EBO
-
-
100
nA
DC current gain
I
C
= 10 mA,
V
CE
= 5 V
I
C
= 500 mA,
V
CE
= 1 V
I
C
= 2 A,
V
CE
= 2 V
h
FE
15
40
25
-
-
-
-
475
-
-
Collector-emitter saturation voltage 1)
I
C
= 2 A,
I
B
= 0.2 A
V
CEsat
-
-
0.8
V
Base-emitter saturation voltage 1)
I
C
= 2 A,
I
B
= 0.2 A
V
BEsat
-
-
1.5
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 10 V,
f = 100 MHz
f
T
-
100
-
MHz
Collector-base capacitance
V
CB
= 10 V,
f = 1 MHz
C
cb
-
25
-
pF
1) Pulse test: t < 300
s; D < 2%