BAS 125-07W
Semiconductor Group
Jun-04-1998
1
Silicon Schottky Diode
For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
Integrated diffused guard ring
Low forward voltage
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BAS 125-07W 17s
Q62702-D1347
1 = C1 2 = C2
SOT-343
3 = A2 4 = A1
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
25
V
Forward current
I
F
100
mA
Surge forward current (t
<
100
s)
I
FSM
500
Total power dissipation,
T
S
= 25 C
P
tot
250
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
- 55 ...+150
Maximum Ratings
Junction - ambient
1)
R
thJA
725
K/W
Junction - soldering point
R
thJS
565
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu
Semiconductor Group
1
1998-11-01
BAS 125-07W
Semiconductor Group
Jun-04-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
V
R
= 20 V
V
R
= 25 V
I
R
-
-
-
-
150
200
A
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 35 mA
V
F
-
-
-
385
530
800
400
650
900
mV
AC characteristics
Diode capacitance
V
R
= 0 V,
f = 1 MHz
C
T
-
-
1.1
pF
Differential forward resistance
I
F
= 5 mA,
f = 10 kHz
r
f
-
16
-
Semiconductor Group
2
1998-11-01
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