Semiconductor Group
1
Silicon Schottky Diodes
BAS 40 ...
q
General-purpose diodes for high-speed switching
q
Circuit protection
q
Voltage clamping
q
High-level detecting and mixing
Available with CECC quality assessment
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BAS 40
Q62702-D339
43s
SOT-23
BAS 40-04
Q62702-D980
44s
BAS 40-05
Q62702-D979
45s
BAS 40-06
Q62702-D978
46s
1)
For detailed information see chapter Package Outlines.
5.91
Semiconductor Group
2
BAS 40 ...
q
General-purpose diodes for high-speed switching
q
Circuit protection
q
Voltage clamping
q
High-level detecting and mixing
Available with CECC quality assessment
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings per Diode
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
SOT-143
BAS 40-07
Q62702-D1314
47s
Thermal Resistance
Junction - ambient
2)
BAS 40
BAS 40-04 ...
R
th JA
345
515
K/W
Junction - soldering point
BAS 40
BAS 40-04 ...
R
th JS
275
375
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
40
V
Forward current
I
F
120
mA
Junction temperature
T
j
150
C
Storage temperature range
T
stg
55 ... + 150
Total power dissipation
BAS 40
T
S
81 C
BAS 40-04 ...
T
S
55 C
P
tot
250
mW
Operating temperature range
T
op
55 ... + 150
Surge forward current,
t
10 ms
I
FSM
200
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
Semiconductor Group
3
BAS 40 ...
Electrical Characteristics per Diode
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
V
Breakdown voltage
I
R
= 10
A
V
(BR)
40
A
Reverse current
V
R
= 30 V
V
R
= 40 V
I
R
1
10
mV
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 40 mA
V
F
310
450
720
380
500
1000
Differential forward resistance
I
F
= 10 mA,
f
= 10 kHz
r
f
10
pF
Diode capacitance
V
R
= 0,
f
= 1 MHz
C
T
4
5
ps
Charge carrier life time
I
F
= 25 mA
100
DC characteristics
Semiconductor Group
4
BAS 40 ...
Forward current
I
F
=
f
(
V
F
)
Diode capacitance
C
T
=
f
(
V
R
)
f
= 1 MHz
Characteristics per Diode at
T
j
= 25 C, unless otherwise specified.
Reverse current
I
R
=
f
(
V
R
)
Differential forward resistance
r
f
=
f
(
I
F
)
f
= 10 kHz
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