Silicon Schottky Diodes
BAT 15- ... 4
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings
Type
Ordering Code
Package
1)
Pin Configuration
BAT 15-014
Q62702-D3429
T1
BAT 15-044
Q62702-D3431
BAT 15-074
Q62702-D3433
BAT 15-104
Q62702-D3435
Frequency
band (GHz)
... 4 (S)
... 8 (C)
... 12.4 (X)
... 18 (Ku)
Cathode: black dot,
heat sink
BAT 15-124
Q62702-D3437
... 40 (Ka)
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
3
V
Junction temperature
T
j
175
C
Storage temperature range
T
stg
65 ... + 150
Forward current BAT 15-014 ... BAT 15-044
BAT 15-074 ... BAT 15-124
I
F
100
50
mA
Operating temperature range
T
op
65 ... + 150
1)
For detailed information see chapter Package Outlines.
q
Low barrier diodes
q
For mixer applications
q
Hermetically sealed ceramic packages
q
For frequencies up to 40 GHz
BAT 15- ... 4
BAT 15- ... 4
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
pF
Diode capacitance
f
= 1 MHz
, V
R
= 0
BAT 15-014
BAT 15-044
BAT 15-074
BAT 15-104
BAT 15-124
C
T
0.25
0.20
0.17
0.13
0.10
0.35
0.25
0.20
0.15
0.12
V
Forward voltage
I
F
= 1 mA
BAT 15-014
BAT 15-044
BAT 15-074
BAT 15-104
BAT 15-124
I
F
= 10 mA
BAT 15-014
BAT 15-044
BAT 15-074
BAT 15-104
BAT 15-124
V
F
0.26
0.28
0.29
0.30
0.31
0.35
0.39
0.42
0.44
0.45
dB
Noise figure (single sideband)
I
F amplifier noise
F
IF
= 1.5 dB,
P
LO
= 3 dBm,
f
IF
= 10.7 MHz
f
= 3 GHz
BAT 15-014
f
= 6 GHz
BAT 15-044
f
= 9.7 GHz
BAT 15-074
f
= 16 GHz
BAT 15-104
BAT 15-124
F
SSB
5.5
5.5
5.5
6.0
9.0
Differential forward resistance
I
F
= 10/50 mA
BAT 15-014
BAT 15-044
BAT 15-074
BAT 15-104
BAT 15-124
r
f
3.0
3.5
4.5
5.5
8.0
V
V
(BR)
3
Breakdown voltage
I
R
= 10
A
Case capacitance
C
C
0.1
DC Characteristics
Unit
Values
Parameter
Symbol
min.
typ.
max.
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