Semiconductor Group
1
NPN Silicon RF Transistor
BF 554
q
For general small-signal RF applications
up to 300 MHz in amplifier,
mixer and oscillator circuits
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BF 554
Q62702-F1042
CC
SOT-23
1
2
3
B
E
C
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
20
V
Collector-base voltage
V
CB0
30
Emitter-base voltage
V
EB0
5
Thermal Resistance
Junction - ambient
2)
R
th JA
450
K/W
Total power dissipation,
T
A
25 C
P
tot
280
mW
Storage temperature range
T
stg
65 ... + 150
Junction temperature
T
j
150
C
Collector current
I
C
30
mA
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm
16.7 mm
0.7 mm.
07.94
BF 554
Semiconductor Group
2
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC Characteristics
AC Characteristics
V
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR) CE0
20
nA
Collector cutoff current
V
CB
= 20 V,
I
E
= 0
I
CB0
100
DC current gain
I
C
= 1 mA,
V
CE
= 10 V
h
FE
60
250
V
Base-emitter voltage
I
C
= 1 mA,
V
CE
= 10 V
V
BE
0.7
MHz
Transition frequency
I
C
= 1 mA,
V
CE
= 10 V,
f
= 100 MHz
f
T
250
pF
Collector-base capacitance
V
CE
= 10 V,
V
BE
= 0 V,
f
= 1 MHz
C
cb
0.6
S
Output conductance
I
C
= 1 mA,
V
CE
= 10 V,
f
= 0.5...10 MHz
g
22e
4
dB
Noise figure
I
C
= 1 mA,
V
CE
= 10 V
f
= 200 kHz,
g
S
= 2 mS
f
= 1 MHz,
g
S
= 1.5 mS
f
= 100 MHz,
g
S
= 10 mS
F
1.5
1.2
3
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