ChipFind - документация

Электронный компонент: Q62702-F1052

Скачать:  PDF   ZIP
Semiconductor Group
1
NPN Silicon High-Voltage Transistor
BF 622
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BF 622
Q62702-F1052
DA
SOT-89
1
2
3
B
C
E
Thermal Resistance
Junction - ambient
2)
R
th JA
90
K/W
Junction - soldering point
R
th JS
30
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
250
V
Peak collector current
I
CM
100
Collector current
I
C
50
mA
Junction temperature
T
j
150
C
Total power dissipation,
T
S
= 120 C
P
tot
1
W
Storage temperature range
T
stg
65 ... + 150
Collector-base voltage
V
CB0
250
Emitter-base voltage
V
EB0
5
Collector-emitter voltage,
R
BE
= 2.7 k
V
CER
250
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
q
Suitable for video output stages in TV sets
q
High breakdown voltage
q
Low collector-emitter saturation voltage
q
Low capacitance
q
Complementary type: BF 623 (PNP)
5.91
Semiconductor Group
2
BF 622
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Collector cutoff current
V
CE
= 200 V,
R
BE
= 2.7 k
V
CE
= 200 V,
R
BE
= 2.7 k
, T
A
= 150 C
V
Collector-emitter breakdown voltage
I
C
= 1 mA
I
C
= 10
A,
R
BE
= 2.7 k
V
(BR)CE0
V
(BR)CER
250
250


Collector-base breakdown voltage
I
C
= 10
A
V
(BR)CB0
250
DC current gain
1)
I
C
= 25 mA,
V
CE
= 20 V
h
FE
50
MHz
Transition frequency
I
C
= 10 mA,
V
CE
= 10 V,
f
= 20 MHz
f
T
100
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
AC characteristics
Emitter-base breakdown voltage
I
E
= 10
A
V
(BR)EB0
5
nA
A
Collector cutoff current
V
CB
= 200 V
V
CB
= 200 V,
T
A
= 150 C
I
CB0


100
20
Emitter cutoff current
V
EB
= 5 V
I
EB0
10
V
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 1 mA
V
CEsat
0.5
Base-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 1 mA
V
BEsat
1
A
I
CER


1
50
pF
Output capacitance
V
CB
= 30 V,
f
= 1 MHz
C
obo
0.8
1)
Pulse test:
t
300
s,
D
= 2 %.
Semiconductor Group
3
BF 622
Total power dissipation
P
tot
=
f
(
T
A
*;
T
S
)
* Package mounted on epoxy
Permissible pulse load
P
tot max
/
P
tot DC
=
f
(
t
p
)
Output capacitance
C
obo
=
f
(
V
CE
)
f
= 1 MHz
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 10 V,
f
= 20 MHz
Semiconductor Group
4
BF 622
DC current gain
h
FE
=
f
(
I
C
)
V
CE
= 20 V
Collector cutoff current
I
CB0
=
f
(
T
A
)
V
CB
= 200 V
Collector current
I
C
=
f
(
V
BE
)
V
CE
= 20 V