Semiconductor Group
1
NPN Silicon RF Transistors
BF 840
BF 841
q
Suitable for common emitter RF, IF amplifiers
q
Low collector-base
capacitance due to contact shield diffusion
q
Low output conductance
Maximum Ratings
Type
Ordering Code
Marking
Package
1)
Pin Configuration
BF 840
Q62702-F1240
NC
SOT-23
1
2
3
B
E
C
BF 841
Q62702-F1287
ND
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
40
V
Collector-base voltage
V
CB0
40
Emitter-base voltage
V
EB0
4
Thermal Resistance
Junction - ambient
2)
R
th JA
450
K/W
Total power dissipation,
T
A
25 C
2)
P
tot
280
mW
Storage temperature range
T
stg
65 ... + 150
Base current
I
B
2
Junction temperature
T
j
150
C
Collector current
I
C
25
mA
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm
16.7 mm
0.7 mm.
07.94
Semiconductor Group
2
BF 840
BF 841
BF 840
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC Characteristics
AC Characteristics
V
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR) CE0
40
nA
Collector-base cutoff current
V
CB
= 20 V,
I
E
= 0
I
CB0
100
DC current gain,
I
C
= 1 mA,
V
CE
= 10 V
BF 840
BF 841
h
FE
65
35
220
125
Emitter-base breakdown voltage
I
E
= 10
A,
I
B
= 0
V
(BR) EB0
4
V
Base-emitter voltage
I
C
= 1 mA,
V
CE
= 10 V
V
BE
0.7
S
Output conductance
I
C
= 1 mA,
V
CE
= 10 V,
f
= 0.5 MHz
g
22e
4
dB
Noise figure
I
C
= 1 mA,
V
CE
= 10 V,
f
= 100 kHz
R
S
= 200
F
1.7
MHz
Transition frequency
I
C
= 1 mA,
V
CE
= 10 V,
f
= 100 MHz
f
T
380
pF
Collector-base capacitance
V
CB
= 10 V,
V
BE
=
v
be
= 0,
f
= 1 MHz
C
cb
0.3
PDF 
ZIP