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Электронный компонент: Q62702-F1246

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Semiconductor Group
1
NPN Silicon High-Voltage Transistors
BFN 36
BFN 38
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BFN 36
BFN 38
Q62702-F1246
Q62702-F1303
BFN 36
BFN 38
SOT-223
1
2
3
4
B
C
E
C
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
Parameter
Symbol
BFN 36
Unit
Collector-emitter voltage
V
CE0
250
V
Collector-base voltage
V
CB0
250
Emitter-base voltage
V
EB0
Collector current
I
C
mA
Base current
I
B
Total power dissipation,
T
S
= 124 C
P
tot
W
Junction temperature
T
j
C
Storage temperature range
T
stg
65 ... + 150
Thermal Resistance
Junction - ambient
2)
R
th JA
72
K/W
Peak collector current
I
CM
Peak base current
I
BM
BFN 38
300
300
200
100
1.5
150
500
200
Values
5
Junction - soldering point
R
th JS
17
q
Suitable for video output stages in TV sets
and switching power supplies
q
High breakdown voltage
q
Low collector-emitter saturation voltage
q
Complementary types: BFN 37, BFN 39 (PNP)
5.91
Semiconductor Group
2
BFN 36
BFN 38
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Collector-emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 2 mA
BFN 36
BFN 38
DC current gain
1)
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 30 mA,
V
CE
= 10 V
BFN 36
I
C
= 30 mA,
V
CE
= 10 V
BFN 38
V
V
CEsat


0.4
0.5
Base-emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 2 mA
V
BEsat
0.9
MHz
Transition frequency
I
C
= 20 mA,
V
CE
= 10 V,
f
= 100 MHz
f
T
70
AC characteristics
V
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
BFN 36
BFN 38
V
(BR)CE0
250
300


Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 100
A,
I
B
= 0
BFN 36
BFN 38
V
(BR)CB0
250
300


Emitter-base breakdown voltage
I
E
= 100
A,
I
B
= 0
V
(BR)EB0
5
nA
Emitter-base cutoff current
V
EB
= 4 V,
I
C
= 0
I
EB0
100
nA
nA
A
A
Collector-base cutoff current
V
CB
= 200 V
BFN 36
V
CB
= 250 V
BFN 38
V
CB
= 200 V,
T
A
= 150 C
BFN 36
V
CB
= 250 V,
T
A
= 150 C
BFN 38
I
CB0






100
100
20
20
h
FE
25
40
40
30






pF
Output capacitance
V
CB
= 30 V,
f
= 1 MHz
C
obo
1.5
1)
Pulse test conditions:
t
300
s,
D
= 2 %.
Semiconductor Group
3
BFN 36
BFN 38
Total power dissipation
P
tot
=
f
(
T
A
*;
T
S
)
* Package mounted on epoxy
Permissible pulse load
P
tot max
/
P
tot DC
=
f
(
t
p
)
Collector current
I
C
=
f
(
V
BE
)
V
CE
= 10 V
Collector cutoff current
I
CB0
=
f
(
T
A
)
V
CB
= 200 V
Semiconductor Group
4
BFN 36
BFN 38
DC current gain
h
FE
=
f
(
I
C
)
V
CE
= 10 V
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 10 V,
f
= 100 MHz