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Электронный компонент: Q62702-F1291

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Semiconductor Group
1
Dec-13-1996
BFG 193
NPN Silicon RF Transistor
For low noise, high-gain amplifiers up to 2GHz
For linear broadband amplifiers
f
T
= 8GHz
F = 1.3dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFG 193
BFG193
Q62702-F1291
1 = E
2 = B
3 = E
4 = C
SOT-223
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CEO
12
V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
2
Collector current
I
C
80
mA
Base current
I
B
10
Total power dissipation
T
S
87 C
P
tot
600
mW
Junction temperature
T
j
150
C
Ambient temperature
T
A
- 65 ... + 150
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
105
K/W
1)
T
S
is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
2
Dec-13-1996
BFG 193
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
12
-
-
V
Collector-emitter cutoff current
V
CE
= 20 V,
V
BE
= 0
I
CES
-
-
100
A
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
I
EBO
-
-
1
A
DC current gain
I
C
= 30 mA,
V
CE
= 8 V
h
FE
50
100
200
-
Semiconductor Group
3
Dec-13-1996
BFG 193
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 8 V,
f = 500 MHz
f
T
6
8
-
GHz
Collector-base capacitance
V
CB
= 10 V,
f = 1 MHz
C
cb
-
0.6
0.9
pF
Collector-emitter capacitance
V
CE
= 10 V,
f = 1 MHz
C
ce
-
0.4
-
Emitter-base capacitance
V
EB
= 0.5 V,
f = 1 MHz
C
eb
-
2
-
Noise figure
I
C
= 10 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
f = 900 MHz
f = 1.8 GHz
F
-
-
2.1
1.3
-
-
dB
Power gain
2)
I
C
= 30 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
Z
L
=
Z
Lopt
f = 900 MHz
f = 1.8 GHz
G
ma
-
-
10
15.5
-
-
Transducer gain
I
C
= 30 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
f = 900 MHz
f = 1.8 GHz
|
S
21e
|
2
-
-
8
13.5
-
-
2)
G
ma
= |
S
21
/
S
12
| (k-(k
2
-1)
1/2
)
Semiconductor Group
4
Dec-13-1996
BFG 193
Total power dissipation
P
tot
=
f (T
A
*,
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C 150
T
A
,T
S
0
50
100
150
200
250
300
350
400
450
500
550
600
mW
700
P
tot
T
S
T
A
Permissible Pulse Load
R
thJS
=
f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
P
totmax
/
P
totDC
=
f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
0
10
1
10
2
10
-
P
totmax
/
P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group
5
Dec-13-1996
BFG 193
Collector-base capacitance
C
cb
=
f (V
CB
)
V
BE
=
v
be
= 0,
f = 1MHz
0
4
8
12
16
V
22
V
R
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
pF
1.1
C
cb
Transition frequency
f
T
=
f (I
C
)
V
CE
= Parameter
0
10
20
30
40
50
60
70
mA
90
I
C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
GHz
9.0
f
T
10V
5V
3V
2V
1V
0.7V
Power Gain
G
ma
,
G
ms
=
f(I
C
)
f = 0.9GHz
V
CE
= Parameter
0
10
20
30
40
50
60
70
mA
90
I
C
4
6
8
10
12
14
16
dB
20
G
10V
5V
3V
2V
1V
0.7V
Power Gain
G
ma
,
G
ms
=
f(I
C
)
f = 1.8GHz
V
CE
= Parameter
0
10
20
30
40
50
60
70
mA
90
I
C
0
2
4
6
8
dB
12
G
10V
5V
3V
2V
1V
0.7V
Semiconductor Group
6
Dec-13-1996
BFG 193
Power Gain
G
ma
,
G
ms
=
f(V
CE
):_____
|
S
21
|
2
=
f(V
CE
):---------
f = Parameter
0
2
4
6
8
V
12
V
R
0
2
4
6
8
10
12
14
dB
18
G
0.9GHz
1.8GHz
0.9GHz
1.8GHz
I
C
=30mA
Intermodulation Intercept Point
IP
3
=
f(I
C
)
(3rd order, Output,
Z
S
=
Z
L
=50
)
V
CE
= Parameter,
f = 900MHz
0
10
20
30
40
50
60
mA
80
I
C
10
15
20
25
dBm
35
IP
3
8V
5V
3V
2V
1V
Power Gain
G
ma
,
G
ms
=
f(f)
V
CE
= Parameter
0.0
0.5
1.0
1.5
2.0
2.5
GHz
3.5
f
0
5
10
15
20
25
dB
35
G
10V
2V
1V
0.7V
I
C
=30mA
Power Gain |
S
21
|
2
=
f(f)
V
CE
= Parameter
0.0
0.5
1.0
1.5
2.0
2.5
GHz
3.5
f
-2
2
6
10
14
18
22
26
dB
32
S
21
10V
2V
1V
0.7V
I
C
=30mA