Semiconductor Group
1
Dec-13-1996
BFG 196
NPN Silicon RF Transistor
For low noise, low distortion broadband
amplifiers in antenna and telecommunications
systems up to 1.5GHz at collector currents from
20mA to 80mA
Power amplifier for DECT and PCN systems
f
T
= 7.5GHz
F = 1.5 dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFG 196
BFG196
Q62702-F1292
1 = E
2 = B
3 = E 4 = C
SOT-223
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CEO
12
V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
2
Collector current
I
C
100
mA
Base current
I
B
12
Total power dissipation
T
S
90 C
P
tot
800
mW
Junction temperature
T
j
150
C
Ambient temperature
T
A
- 65 ... + 150
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
75
K/W
1)
T
S
is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
2
Dec-13-1996
BFG 196
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
12
-
-
V
Collector-emitter cutoff current
V
CE
= 20 V,
V
BE
= 0
I
CES
-
-
100
A
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
I
EBO
-
-
1
A
DC current gain
I
C
= 50 mA,
V
CE
= 8 V
h
FE
50
100
200
-
Semiconductor Group
3
Dec-13-1996
BFG 196
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
I
C
= 70 mA,
V
CE
= 8 V,
f = 500 MHz
f
T
5
7.5
-
GHz
Collector-base capacitance
V
CB
= 10 V,
f = 1 MHz
C
cb
-
0.97
1.4
pF
Collector-emitter capacitance
V
CE
= 10 V,
f = 1 MHz
C
ce
-
0.4
-
Emitter-base capacitance
V
EB
= 0.5 V,
f = 1 MHz
C
eb
-
4
-
Noise figure
I
C
= 20 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
f = 900 MHz
f = 1.8 GHz
F
-
-
2.5
1.5
-
-
dB
Power gain
2)
I
C
= 50 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
Z
L
=
Z
Lopt
f = 900 MHz
f = 1.8 GHz
G
ma
-
-
8.5
14
-
-
Transducer gain
I
C
= 50 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
f = 900 MHz
f = 1.8 GHz
|
S
21e
|
2
-
-
6
11.5
-
-
2)
G
ma
= |
S
21
/
S
12
| (k-(k
2
-1)
1/2
)
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