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Электронный компонент: Q62702-F1309

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Semiconductor Group
1
PNP Silicon High-Voltage Transistors
BF 721
BF 723
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BF 721
BF 723
Q62702-F1239
Q62702-F1309
BF 721
BF 723
SOT-223
1
2
3
4
B
C
E
C
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
V
CER
V
Peak collector current
I
CM
Collector current
I
C
mA
Junction temperature
T
j
C
Total power dissipation,
T
S
110 C
2)
P
tot
W
Storage temperature range
T
stg
Collector-base voltage
V
CB0
Thermal Resistance
Junction - ambient
2)
R
th JA
87
K/W
50
100
1.5
150
65 ... + 150
Emitter-base voltage
V
EB0

300
250
300
250
BF 721
BF 723
5
5
Junction - soldering point
R
th JS
27
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
q
Suitable for video output stages in TV sets and
switching power supplies
q
High breakdown voltage
q
Low collector-emitter saturation voltage
q
Low capacitance
q
Complementary types: BF 720/722 (NPN)
07.94
Semiconductor Group
2
BF 721
BF 723
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
DC current gain
1)
I
C
= 25 mA,
V
CE
= 20 V
Collector-emitter cutoff current
V
CE
= 200 V,
R
BE
= 2.7 k
V
CE
= 200 V,
R
BE
= 2.7 k
,
T
A
= 150 C
Collector-emitter breakdown voltage
I
C
= 10
A,
R
BE
= 2.7 k
BF 721
V
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
BF 723
V
(BR)CE0
250
nA
Collector-base cutoff current
V
CB
= 200 V,
I
E
= 0
I
CB0
10
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 10
A,
I
B
= 0
BF 721
BF 723
V
(BR)CB0
300
250


Emitter-base breakdown voltage
I
E
= 10
A,
I
C
= 0
V
(BR)EB0
5
V
Collector-emitter saturation voltage
I
C
= 30 mA,
I
B
= 5 mA
V
CEsat
0.6
h
FE
50
A
Emitter-base cutoff current
V
EB
= 5 V,
I
C
= 0
I
EB0
10
MHz
Transition frequency
I
C
= 10 mA,
V
CE
= 10 V,
f
= 100 MHz
f
T
100
AC characteristics
pF
Collector-base capacitance
V
CB
= 30 V,
I
C
= 0,
f
= 1 MHz
C
obo
0.8
V
(BR)CER
300
nA
A
I
CER


50
10
1)
Pulse test conditions:
t
300
s,
D
= 2 %.
Semiconductor Group
3
BF 721
BF 723
Total power dissipation
P
tot
=
f
(
T
A
*;
T
S
)
* Package mounted on epoxy
Collector current
I
C
=
f
(
V
BE
)
V
CE
= 20 V
Collector cutoff current
I
CB0
=
f
(
T
A
)
V
CB
= 200 V
Permissible pulse load
P
tot max
/
P
tot DC
=
f
(
t
p
)
Semiconductor Group
4
BF 721
BF 723
DC current gain
h
FE
=
f
(
I
C
)
V
CE
= 20 V
Collector-base capacitance
C
obo
=
f
(
V
CB
)
I
C
= 0,
f
= 1 MHz
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 10 V,
f
= 100 MHz