Semiconductor Group
1
Dec-13-1996
BFQ 193
NPN Silicon RF Transistor
For low noise, high-gain amplifiers up to 2GHz
For linear broadband amplifiers
f
T
= 7.5 GHz
F = 1.3 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFQ 193
RCs
Q62702-F1312
1 = B
2 = C
3 = E
SOT-89
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CEO
12
V
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
2
Collector current
I
C
80
mA
Base current
I
B
10
Total power dissipation
T
S
93 C
P
tot
600
mW
Junction temperature
T
j
150
C
Ambient temperature
T
A
- 65 ... + 150
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
95
K/W
Semiconductor Group
2
Dec-13-1996
BFQ 193
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
12
-
-
V
Collector-emitter cutoff current
V
CE
= 20 V,
V
BE
= 0
I
CES
-
-
100
A
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
I
EBO
-
-
1
A
DC current gain
I
C
= 30 mA,
V
CE
= 8 V
h
FE
50
100
200
-
Semiconductor Group
3
Dec-13-1996
BFQ 193
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 8 V,
f = 500 MHz
f
T
5.5
7.5
-
GHz
Collector-base capacitance
V
CB
= 10 V,
f = 1 MHz
C
cb
-
0.78
1.2
pF
Collector-emitter capacitance
V
CE
= 10 V,
f = 1 MHz
C
ce
-
0.36
-
Emitter-base capacitance
V
EB
= 0.5 V,
f = 1 MHz
C
eb
-
2.1
-
Noise figure
I
C
= 10 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
f = 900 MHz
f = 1.8 GHz
F
-
-
2.1
1.3
-
-
dB
Power gain
2)
I
C
= 30 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
Z
L
=
Z
Lopt
f = 900 MHz
f = 1.8 GHz
G
ma
-
-
8
14
-
-
Transducer gain
I
C
= 30 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
f = 900 MHz
f = 1.8 GHz
|
S
21e
|
2
-
-
6
11.5
-
-
Semiconductor Group
4
Dec-13-1996
BFQ 193
Total power dissipation
P
tot
=
f (T
A
*,
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C 150
T
A
,T
S
0
50
100
150
200
250
300
350
400
450
500
550
600
mW
700
P
tot
T
S
T
A
Permissible Pulse Load
R
thJS
=
f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
0
10
1
10
2
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
P
totmax
/
P
totDC
=
f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
0
10
1
10
2
10
-
P
totmax
/
P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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