Semiconductor Group
1
Dec-13-1996
BFG 19S
NPN Silicon RF Transistor
For low noise, low distortion broadband
amplifiers in antenna and
telecommunications systems up to 1.5GHz
at collector currents from 10 mA to 70 mA
CECC-type available: CECC 50 002/259
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFG 19S
BFG19S Q62702-F1359
1 = E
2 = B
3 = E 4 = C
SOT-223
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CEO
15
V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
3
Collector current
I
C
100
mA
Base current
I
B
12
Total power dissipation
T
S
75 C
P
tot
1
W
Junction temperature
T
j
150
C
Ambient temperature
T
A
- 65 ... + 150
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
75
K/W
1)
T
S
is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
2
Dec-13-1996
BFG 19S
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
15
-
-
V
Collector-emitter cutoff current
V
CE
= 20 V,
V
BE
= 0
I
CES
-
-
100
A
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 2 V,
I
C
= 0
I
EBO
-
-
10
A
DC current gain
I
C
= 70 mA,
V
CE
= 8 V
h
FE
40
100
220
-
Semiconductor Group
3
Dec-13-1996
BFG 19S
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
I
C
= 70 mA,
V
CE
= 8 V,
f = 500 MHz
f
T
4
5.5
-
GHz
Collector-base capacitance
V
CB
= 10 V,
f = 1 MHz
C
cb
-
0.85
1.4
pF
Collector-emitter capacitance
V
CE
= 10 V,
f = 1 MHz
C
ce
-
0.4
-
Emitter-base capacitance
V
EB
= 0.5 V,
f = 1 MHz
C
eb
-
4.6
-
Noise figure
I
C
= 20 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
f = 900 MHz
f = 1.8 GHz
F
-
-
4
2.5
-
-
dB
Power gain
2)
I
C
= 70 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
Z
L
=
Z
Lopt
f = 900 MHz
f = 1.8 GHz
G
ma
-
-
8
13.5
-
-
Transducer gain
I
C
= 30 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
f = 900 MHz
f = 1.8 GHz
|
S
21e
|
2
-
-
5
11
-
-
Third order intercept point
I
C
= 70 mA,
V
CE
= 8 V,
f = 900 MHz
Z
S
=
Z
L
= 50
IP
3
-
35
-
dBm
2)
G
ma
= |
S
21
/
S
12
| (k-(k
2
-1)
1/2
)
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