Semiconductor Group
1
May-30-1996
BSS 159
Preliminary data
SIPMOS
Small-Signal Transistor
N channel
Depletion mode
High dynamic resistance
Pin 1
Pin 2
Pin 3
G
S
D
Type
V
DS
I
D
R
DS(on)
Package
Ordering Code
BSS 159
50 V
0.16 A
8
SOT-23
Q67050-T6
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain source voltage
V
DS
50
V
Drain-gate voltage
R
GS
= 20 k
V
DGR
50
Gate source voltage
V
GS
14
Gate-source peak voltage, aperiodic
V
gs
20
Continuous drain current
T
A
= 25 C
I
D
0.16
A
DC drain current, pulsed
T
A
= 25 C
I
Dpuls
0.48
Power dissipation
T
A
= 25 C
P
tot
0.36
W
Chip or operating temperature
T
j
-55 ... + 150 C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip to ambient air
R
thJA
350
K/W
Therminal resistance, chip-substrate - reverse side
1)
R
thJSR
285
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm.
Semiconductor Group
2
May-30-1996
BSS 159
Preliminary data
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
= -10 V,
I
D
= 250 A
V
(BR)DSV
50
-
-
V
Gate threshold voltage
V
DS
= 3 V,
I
D
= 10 A
V
GS(th)
-3
-2.5
-1.5
Drain-source cutoff current
V
DS
= 50 V,
V
GS
= -10 V,
T
j
= 25 C
V
DS
= 50 V,
V
GS
= -10 V,
T
j
= 125 C
I
DSV
-
-
-
-
-
1
A
On-state drain current
V
GS
= 0 V,
V
DS
= 10 V
I
D(on)
70
200
-
mA
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
I
GSS
-
10
100
nA
Drain-Source on-resistance
V
GS
= 0 V,
I
D
= 0.07 A
R
DS(on)
-
4
8
Semiconductor Group
3
May-30-1996
BSS 159
Preliminary data
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= 0.16 A
g
fs
0.1
0.16
-
S
Input capacitance
V
GS
= -4.5 V,
V
DS
= 25 V,
f = 1 MHz
C
iss
-
70
100
pF
Output capacitance
V
GS
= -4.5 V,
V
DS
= 25 V,
f = 1 MHz
C
oss
-
15
25
Reverse transfer capacitance
V
GS
= -4.5 V,
V
DS
= 25 V,
f = 1 MHz
C
rss
-
6
9
Turn-on delay time
V
DD
= 30 V,
V
GS
= -5... + 5 V,
I
D
= 0.28 A
R
GS
= 50
t
d(on)
-
7
11
ns
Rise time
V
DD
= 30 V,
V
GS
= -5... + 5 V,
I
D
= 0.28 A
R
GS
= 50
t
r
-
11
17
Turn-off delay time
V
DD
= 30 V,
V
GS
= -5... + 5 V,
I
D
= 0.28 A
R
GS
= 50
t
d(off)
-
13
17
Fall time
V
DD
= 30 V,
V
GS
= -5... + 5 V,
I
D
= 0.28 A
R
GS
= 50
t
f
-
14
19
Semiconductor Group
4
May-30-1996
BSS 159
Preliminary data
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
A
= 25 C
I
S
-
-
0.1
A
Inverse diode direct current,pulsed
T
A
= 25 C
I
SM
-
-
0.3
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 0.3 A
V
SD
-
0.8
1.3
V
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