Semiconductor Group
1
Dec-13-1996
BFG 235
NPN Silicon RF Transistor
For low-distortion broadband output amplifier
stages in antenna and telecommunications
systems up to 2 GHz at collector currents from
120mA to 250mA
Power amplifiers for DECT and PCN systems
Integrated emitter ballast resistor
f
T
= 5.5 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFG 235
BFG235
Q62702-F1432
1 = E
2 = B
3 = E 4 = C
SOT-223
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CEO
15
V
Collector-emitter voltage
V
CES
25
Collector-base voltage
V
CBO
25
Emitter-base voltage
V
EBO
2
Collector current
I
C
300
mA
Base current
I
B
40
Total power dissipation
T
S
80 C
P
tot
2000
mW
Junction temperature
T
j
150
C
Ambient temperature
T
A
- 65 ... + 150
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
35
K/W
1)
T
S
is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
2
Dec-13-1996
BFG 235
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
15
-
-
V
Collector-emitter cutoff current
V
CE
= 25 V,
V
BE
= 0
I
CES
-
-
200
A
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
I
EBO
-
-
2
A
DC current gain
I
C
= 200 mA,
V
CE
= 5 V
h
FE
50
120
250
-
Semiconductor Group
3
Dec-13-1996
BFG 235
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
I
C
= 200 mA,
V
CE
= 8 V,
f = 200 MHz
f
T
4
5.5
-
GHz
Collector-base capacitance
V
CB
= 10 V,
f = 1 MHz
C
cb
-
2.6
3.6
pF
Collector-emitter capacitance
V
CE
= 10 V,
f = 1 MHz
C
ce
-
1.5
-
Emitter-base capacitance
V
EB
= 0.5 V,
f = 1 MHz
C
eb
-
15
-
Noise figure
I
C
= 60 mA,
V
CE
= 8 V,
f = 900 MHz
Z
S
=
Z
Sopt
F
-
2.7
-
dB
Power gain
2)
I
C
= 200 mA,
V
CE
= 8 V,
f = 900 MHz
Z
S
=
Z
Sopt,
Z
L
=
Z
Lopt
G
ma
-
12
-
Transducer gain
I
C
= 200 mA,
V
CE
= 8 V,
f = 900 MHz
Z
S
=
Z
L
= 50
|
S
21e
|
2
-
6
-
Third order intercept point
I
C
= 200 mA,
V
CE
= 8 V,
f = 900 MHz
Z
S
=
Z
L
= 50
IP
3
-
40
-
dBm
2)
G
ma
= |
S
21
/
S
12
| (k-(k
2
-1)
1/2
)
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