Semiconductor Group
1
Aug-30-1996
BFP 181W
NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at
collector currents from 0.5mA to 12mA
f
T
= 8GHz
F = 1.45dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFP 181W
RFs
Q62702-F1501
1 = E
2 = C
3 = E
4 = B
SOT-343
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CEO
12
V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
2
Collector current
I
C
20
mA
Base current
I
B
2
Total power dissipation
T
S
91 C
P
tot
175
mW
Junction temperature
T
j
150
C
Ambient temperature
T
A
- 65 ... + 150
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
340
K/W
1)
T
S
is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
2
Aug-30-1996
BFP 181W
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
12
-
-
V
Collector-emitter cutoff current
V
CE
= 20 V,
V
BE
= 0
I
CES
-
-
100
A
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
I
EBO
-
-
1
A
DC current gain
I
C
= 5 mA,
V
CE
= 8 V
h
FE
50
100
200
-
Semiconductor Group
3
Aug-30-1996
BFP 181W
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 8 V,
f = 500 MHz
f
T
6
8
-
GHz
Collector-base capacitance
V
CB
= 10 V,
V
BE
=
v
be
= 0 ,
f = 1 MHz
C
cb
-
0.24
0.4
pF
Collector-emitter capacitance
V
CE
= 10 V,
V
BE
=
v
be
= 0 ,
f = 1 MHz
C
ce
-
0.27
-
Emitter-base capacitance
V
EB
= 0.5 V,
V
CB
=
v
cb
= 0 ,
f = 1 MHz
C
eb
-
0.32
-
Noise figure
I
C
= 2 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
f = 900 MHz
f = 1.8 GHz
F
-
-
1.8
1.45
-
-
dB
Power gain
1)
I
C
= 5 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
Z
L
=
Z
Lopt
f = 900 MHz
f = 1.8 GHz
G
ms
-
-
16.5
20
-
-
Transducer gain
I
C
= 5 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
f = 900 MHz
f = 1.8 GHz
|
S
21e
|
2
-
-
11.5
16.5
-
-
1)
G
ms
= |
S
21
/
S
12
|
Semiconductor Group
4
Aug-30-1996
BFP 181W
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
0.0010519 fA
VAF =
22.403
V
NE =
1.7631
-
VAR =
5.1127
V
NC =
1.6528
-
RBM =
6.6315
CJE =
1.8168
fF
TF =
17.028
ps
ITF =
1.0549
mA
VJC =
1.1633
V
TR =
2.7449
ns
MJS =
0
-
XTI =
3
-
BF =
96.461
-
IKF =
0.12146
A
BR =
16.504
-
IKR =
0.24951
A
RB =
9.9037
RE =
2.1372
VJE =
0.73155
V
XTF =
0.33814
-
PTF =
0
deg
MJC =
0.30013
-
CJS =
0
fF
XTB =
0
-
FC =
0.99768
-
NF =
0.90617
-
ISE =
12.603
fA
NR =
0.87757
-
ISC =
0.01195
fA
IRB =
0.69278
mA
RC =
2.2171
MJE =
0.43619
-
VTF =
0.12571
V
CJC =
319.69
fF
XCJC =
0.082903
-
VJS =
0.75
V
EG =
1.11
eV
TNOM
300
K
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut fr Mobil-und Satellitenfunktechnik (IMST)
1996 SIEMENS AG
Package Equivalent Circuit:
LBI =
0.43
nH
LBO =
0.47
nH
LEI =
0.26
nH
LEO =
0.12
nH
LCI =
0.06
nH
LCO =
0.36
nH
CBE =
68
fF
CCB =
46
fF
CCE =
232
fF
Valid up to 6 GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/357.htm
Semiconductor Group
5
5
BFP 181W
Total power dissipation
P
tot
=
f (T
A
*,
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C 150
T
A
,T
S
0
20
40
60
80
100
120
140
160
mW
200
P
tot
T
S
T
A
Permissible Pulse Load
R
thJS
=
f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
P
totmax
/
P
totDC
=
f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
0
10
1
10
2
10
-
P
totmax
/
P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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