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Электронный компонент: Q62702-F1531

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Semiconductor Group
1
Dec-16-1996
BFS 480
NPN Silicon RF Transistor
For low noise, low-power amplifiers in mobile
communication systems (pager, cordless
telephone) at collector currents from 0.2mA to 8mA
f
T
= 7GHz
F = 1.5dB at 900MHz
Two (galvanic) internal isolated
Transistors in one package
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFS 480
REs
Q62702-F1531
1/4 = B
2/5 = E
3/6 = C
SOT-363
data below is of a single transistor
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CEO
8
V
Collector-emitter voltage
V
CES
10
Collector-base voltage
V
CBO
10
Emitter-base voltage
V
EBO
2
Collector current
I
C
10
mA
Base current
I
B
1.2
Total power dissipation
T
S
112 C
P
tot
80
mW
Junction temperature
T
j
150
C
Ambient temperature
T
A
- 65 ... + 150
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
470
K/W
1)
T
S
is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
2
Dec-16-1996
BFS 480
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
8
-
-
V
Collector-emitter cutoff current
V
CE
= 10 V,
V
BE
= 0
I
CES
-
-
100
A
Collector-base cutoff current
V
CB
= 8 V,
I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
I
EBO
-
-
1
A
DC current gain
I
C
= 3 mA,
V
CE
= 5 V
h
FE
30
100
200
-
Semiconductor Group
3
Dec-16-1996
BFS 480
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
I
C
= 6 mA,
V
CE
= 5 V,
f = 500 MHz
f
T
5
7.5
-
GHz
Collector-base capacitance
V
CB
= 5 V,
f = 1 MHz
C
cb
-
0.23
0.4
pF
Collector-emitter capacitance
V
CE
= 5 V,
f = 1 MHz
C
ce
-
0.1
-
Emitter-base capacitance
V
EB
= 0.5 V,
f = 1 MHz
C
eb
-
0.23
-
Noise figure
I
C
= 1.5 mA,
V
CE
= 5 V,
Z
S
=
Z
Sopt
f = 900 MHz
f = 1.8 GHz
F
-
-
2
1.5
-
-
dB
Power gain
1)
I
C
= 3 mA,
V
CE
= 5 V,
Z
S
=
Z
Sopt
Z
L
=
Z
Lopt
f = 900 MHz
f = 1.8 GHz
G
ms
-
-
14
18
-
-
Transducer gain
I
C
= 3 mA,
V
CE
= 5 V,
Z
S
=
Z
L
= 50
f = 900 MHz
f = 1.8 GHz
|
S
21e
|
2
-
-
9.5
14
-
-
1)
G
ms
= |
S
21
/
S
12
|
Semiconductor Group
4
Dec-16-1996
BFS 480
Total power dissipation
P
tot
=
f (T
A
*,
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C 150
T
A
,T
S
0
10
20
30
40
50
60
70
80
mW
100
P
tot
T
S
T
A
Permissible Pulse Load
R
thJS
=
f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
P
totmax
/
P
totDC
=
f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
0
10
1
10
2
10
-
P
totmax
/
P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group
5
Dec-16-1996
BFS 480
Collector-base capacitance
C
cb
=
f (V
CB
)
V
BE
=
v
be
= 0,
f = 1MHz
0
2
4
6
8
V
12
V
R
0.00
0.05
0.10
0.15
0.20
0.25
0.30
pF
0.40
C
cb
Transition frequency
f
T
=
f (I
C
)
V
CE
= Parameter
0
2
4
6
8
mA
12
I
C
1
2
3
4
5
6
7
8
GHz
10
f
T
10V
5V
3V
2V
1V
0.7V
Power Gain
G
ma
,
G
ms
=
f(I
C
)
f = 0.9GHz
V
CE
= Parameter
0
2
4
6
8
mA
12
I
C
8
10
12
14
16
18
dB
22
G
8V
2V
1V
0.7V
Power Gain
G
ma
,
G
ms
=
f(I
C
)
f = 1.8GHz
V
CE
= Parameter
0
2
4
6
8
mA
12
I
C
5
6
7
8
9
10
11
12
13
dB
15
G
8V
3V
2V
1V
0.7V