Semiconductor Group
1
Dec-16-1996
BFS 480
NPN Silicon RF Transistor
For low noise, low-power amplifiers in mobile
communication systems (pager, cordless
telephone) at collector currents from 0.2mA to 8mA
f
T
= 7GHz
F = 1.5dB at 900MHz
Two (galvanic) internal isolated
Transistors in one package
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFS 480
REs
Q62702-F1531
1/4 = B
2/5 = E
3/6 = C
SOT-363
data below is of a single transistor
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CEO
8
V
Collector-emitter voltage
V
CES
10
Collector-base voltage
V
CBO
10
Emitter-base voltage
V
EBO
2
Collector current
I
C
10
mA
Base current
I
B
1.2
Total power dissipation
T
S
112 C
P
tot
80
mW
Junction temperature
T
j
150
C
Ambient temperature
T
A
- 65 ... + 150
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
470
K/W
1)
T
S
is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
2
Dec-16-1996
BFS 480
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
8
-
-
V
Collector-emitter cutoff current
V
CE
= 10 V,
V
BE
= 0
I
CES
-
-
100
A
Collector-base cutoff current
V
CB
= 8 V,
I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
I
EBO
-
-
1
A
DC current gain
I
C
= 3 mA,
V
CE
= 5 V
h
FE
30
100
200
-
Semiconductor Group
3
Dec-16-1996
BFS 480
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
I
C
= 6 mA,
V
CE
= 5 V,
f = 500 MHz
f
T
5
7.5
-
GHz
Collector-base capacitance
V
CB
= 5 V,
f = 1 MHz
C
cb
-
0.23
0.4
pF
Collector-emitter capacitance
V
CE
= 5 V,
f = 1 MHz
C
ce
-
0.1
-
Emitter-base capacitance
V
EB
= 0.5 V,
f = 1 MHz
C
eb
-
0.23
-
Noise figure
I
C
= 1.5 mA,
V
CE
= 5 V,
Z
S
=
Z
Sopt
f = 900 MHz
f = 1.8 GHz
F
-
-
2
1.5
-
-
dB
Power gain
1)
I
C
= 3 mA,
V
CE
= 5 V,
Z
S
=
Z
Sopt
Z
L
=
Z
Lopt
f = 900 MHz
f = 1.8 GHz
G
ms
-
-
14
18
-
-
Transducer gain
I
C
= 3 mA,
V
CE
= 5 V,
Z
S
=
Z
L
= 50
f = 900 MHz
f = 1.8 GHz
|
S
21e
|
2
-
-
9.5
14
-
-
1)
G
ms
= |
S
21
/
S
12
|