AlGaAs / InGaAs HEMT
CFY 77
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 1/4
11.01.1996
HL EH PD 21
D a t a s h e e t
Features
* Very low noise
* Very high gain
* For low noise front end amplifiers up to 20 GHz
* For DBS down converters
ESD:
Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(taped)
Package 1)
CFY77-08
HG
Q62702-F1549
MW-4
CFY77-10
HH
Q62702-F1559
MW-4
Maximum ratings
Symbol
Unit
Drain-source voltage
VDS
3.5
V
Drain-gate voltage
VDG
4.5
V
Gate-source voltage
VGS
-3.0
V
Drain current
ID
60
mA
Channel temperature
TCh
150
C
Storage temperature range
Tstg
-65...+150
C
Total power dissipation
(T
S
< 51C)
2)
Ptot
180
mW
Thermal resistance
Channel-soldering point source
RthChS
550
K/W
1)
Dimensions see chapter Package Outlines
2) T
S
: Temperature measured at soldering point
AlGaAs / InGaAs HEMT
CFY 77
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 2/4
11.01.1996
HL EH PD 21
Electrical characteristics at
TA = 25C
unless otherwise specified
Characteristics
Symbol
min
typ
max
Unit
Drain-source saturation current
VDS = 2 V
VGS = 0 V
IDSS
15
30
60
mA
Pinch-off voltage
VDS = 2 V
ID = 1 mA
VGS(P)
-2
-0.7
-0.2
V
Gate leakage current
VDS = 2 V
ID = 15 mA
IG
-
0.05
2
A
Transconductance
VDS = 2 V ID = 15 mA
gm
50
65
-
mS
Noise figure
VDS = 2 V
ID = 15 mA
f = 12 GHz
CFY77-08
CFY77-10
F
-
-
0.7
0.9
0.8
1
dB
Associated gain
VDS = 2 V
ID = 15 mA
f = 12 GHz
CFY77-08
CFY77-10
Ga
10
9.5
10.5
10
-
-
dB
AlGaAs / InGaAs HEMT
CFY 77
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 3/4
11.01.1996
HL EH PD 21
Total Power Dissipation Ptot = f (T
S
;T
A
)
Package mounted on alumina
0
20
40
60
80
100
120
140
160
180
200
0 50 100 150
A
S
tot
P
T
T
;
[ C ]
[ mW ]
A
T
S
T
Typical Common Source Noise Parameters
ID = 15 mA
UDS = 2.0 V
Z0 = 50
f
F
min
G
a
opt
R
n
r
n
N
F
50
GHz
dB
dB
MAG
ANG
dB
2
0.36
19.4
0.79
27
13.7
0.274
0.03
1.2
4
0.44
15.9
0.72
60
10.1
0.202
0.04
1.1
6
0.51
13.9
0.63
92
5.85
0.117
0.05
1.05
8
0.58
12.4
0.56
134
2.35
0.047
0.06
1.0
10
0.65
11.2
0.52
180
1.1
0.022
0.07
1.0
12
0.72
10.4
0.54
-135
2.9
0.058
0.08
1.1
14
0.80
9.7
0.59
-108
7.15
0.143
0.10
1.5
AlGaAs / InGaAs HEMT
CFY 77
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 4/4
11.01.1996
HL EH PD 21
Typical Common Source S-Parameters
ID = 15 mA UD = 2.0 V Z
0
= 50
S11
S21
S12
S22
GHz
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
1
0.98
-22.8
5.55
159.6
0.030
87.5
0.633
-16.3
2
0.94
-46.1
5.40
139.3
0.053
57.8
0.60
-32.5
3
0.88
-68.4
5.09
120.1
0.074
44.9
0.54
-48.0
4
0.82
-90.6
4.77
101.2
0.089
30.7
0.48
-63.3
5
0.77
-110.8
4.45
84.0
0.101
18.1
0.42
-77.5
6
0.72
-131.4
4.16
67.3
0.112
7.9
0.35
-92.6
7
0.66
-153.6
3.88
50.2
0.119
-3.3
0.28
-110.8
8
0.63
-175.2
3.58
34.5
0.122
-12.7
0.22
-132.0
9
0.62
164.4
3.29
18.9
0.120
-22.0
0.16
-157.3
10
0.62
145.0
3.01
4.0
0.119
-29.5
0.14
177.3
11
0.64
128.3
2.76
-10.3
0.119
-37.4
0.15
136.2
12
0.64
113.1
2.51
-23.5
0.114
-44.0
0.18
115.4
13
0.66
101.3
2.32
-35.7
0.114
-47.3
0.23
100.9
14
0.67
89.4
2.18
-48.2
0.116
-53.1
0.25
91.0
15
0.69
73.6
2.06
-62.4
0.116
-58.6
0.28
75.4
16
0.73
59.2
1.85
-75.9
0.115
-65.8
0.36
57.1
17
0.76
51.7
1.65
-86.5
0.112
-69.4
0.39
53.1
18
0.78
45.4
1.56
-96.7
0.115
-72.3
0.42
43.8
19
0.77
36.2
1.51
-108.6
0.121
-76.7
0.44
38.8
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