Semiconductor Group
1
Nov-28-1996
BF 799W
NPN Silicon RF Transistor
For linear broadband amplifier applications
up to 500MHz
SAW filter driver in TV tuners
Type
Marking Ordering Code
Pin Configuration
Package
BF 799W
LKs
Q62702-F1571
1 = B
2 = E
3 = C
SOT-323
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CEO
20
V
Collector-emitter voltage
V
CES
30
Collector-base voltage
V
CBO
30
Emitter-base voltage
V
EBO
3
Collector current
I
C
35
mA
Base current
I
B
10
Total power dissipation
T
S
107 C
P
tot
280
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
- 65 ... - 150
Thermal Resistance
Junction - soldering point
R
thJS
155
K/W
Semiconductor Group
2
Nov-28-1996
BF 799W
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
20
-
-
V
Collector-base breakdown voltage
I
C
= 10 A,
I
E
= 0
V
(BR)CBO
30
-
-
Base-emitter breakdown voltage
I
E
= 10 A,
I
C
= 0
V
(BR)EBO
3
-
-
Collector-base cutoff current
V
CB
= 20 V,
I
E
= 0
I
CBO
-
-
100
nA
DC current gain
I
C
= 5 mA,
V
CE
= 10 V
I
C
= 20 mA,
V
CE
= 10 V
h
FE
40
35
100
95
250
-
-
Collector-emitter saturation voltage
I
C
= 20 mA,
I
B
= 2 mA
V
CEsat
-
0.15
0.5
V
Base-emitter saturation voltage
I
C
= 20 mA,
I
B
= 2 mA
V
BEsat
-
-
0.95
Semiconductor Group
3
Nov-28-1996
BF 799W
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
I
C
= 5 mA,
V
CE
= 10 V,
f = 100 MHz
I
C
= 20 mA,
V
CE
= 8 V,
f = 100 MHz
f
T
-
-
1100
800
-
-
MHz
Collector-base capacitance
V
CB
= 10 V,
V
BE
=
v
be
= 0 ,
f = 1 MHz
C
cb
-
0.7
-
pF
Collector-emitter capacitance
V
CE
= 10 V,
V
BE
=
v
be
= 0 ,
f = 1 MHz
C
ce
-
0.28
-
Output capacitance
V
CB
= 10 V,
I
E
= 0 mA,
f = 1 MHz
C
ob
-
0.96
-
Noise figure
I
C
= 5 mA,
V
CE
= 10 V,
f = 100 MHz
Z
S
= 50
F
-
3
-
dB
Output conductance
I
C
= 20 mA,
V
CE
= 10 V,
f = 35 MHz
g
22e
-
60
-
S
Semiconductor Group
4
Nov-28-1996
BF 799W
Total power dissipation
P
tot
=
f (T
A
*,
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C 150
T
A
,T
S
0
20
40
60
80
100
120
140
160
180
200
220
240
260
mW
300
P
tot
T
S
T
A
Permissible Pulse Load
R
thJS
=
f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
P
totmax
/
P
totDC
=
f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
0
10
1
10
2
10
-
P
totmax
/
P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group
5
Nov-28-1996
BF 799W
Transition frequency
f
T
=
f (I
C
)
f = 100MHz
V
CE
= Parameter
Collector-base capacitance
C
cb
=
f (V
CB
)
V
BE
=
v
be
= 0,
f = 1MHz
PDF 
ZIP