Semiconductor Group
1
Dec-12-1996
BFP 196W
NPN Silicon RF Transistor
For low noise, low distortion broadband
amplifiers in antenna and telecommunications
systems up to 1.5GHz at collector currents from
20mA to 80mA
Power amplifier for DECT and PCN systems
f
T
= 7.5GHz
F = 1.5 dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFP 196W
RIs
Q62702-F1576
1 = E
2 = C
3 = E
4 = B
SOT-343
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CEO
12
V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
2
Collector current
I
C
100
mA
Base current
I
B
12
Total power dissipation
T
S
69 C
P
tot
700
mW
Junction temperature
T
j
150
C
Ambient temperature
T
A
- 65 ... + 150
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
115
K/W
1)
T
S
is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
2
Dec-12-1996
BFP 196W
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
12
-
-
V
Collector-emitter cutoff current
V
CE
= 20 V,
V
BE
= 0
I
CES
-
-
100
A
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
I
EBO
-
-
1
A
DC current gain
I
C
= 50 mA,
V
CE
= 8 V
h
FE
50
100
200
-
Semiconductor Group
3
Dec-12-1996
BFP 196W
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
I
C
= 70 mA,
V
CE
= 8 V,
f = 500 MHz
f
T
5
7.5
-
GHz
Collector-base capacitance
V
CB
= 10 V,
f = 1 MHz
C
cb
-
1
1.4
pF
Collector-emitter capacitance
V
CE
= 10 V,
f = 1 MHz
C
ce
-
0.36
-
Emitter-base capacitance
V
EB
= 0.5 V,
f = 1 MHz
C
eb
-
3.7
-
Noise figure
I
C
= 20 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
f = 900 MHz
f = 1.8 GHz
F
-
-
2.5
1.5
-
-
dB
Power gain
2)
I
C
= 50 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
Z
L
=
Z
Lopt
f = 900 MHz
f = 1.8 GHz
G
ma
-
-
11.5
17.5
-
-
Transducer gain
I
C
= 50 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
f = 900 MHz
f = 1.8 GHz
|
S
21e
|
2
-
-
6.5
12.5
-
-
2)
G
ma
= |
S
21
/
S
12
| (k-(k
2
-1)
1/2
)
Semiconductor Group
4
Dec-12-1996
BFP 196W
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
1.7264
fA
VAF =
20
V
NE =
1.1766
-
VAR =
3.8128
V
NC =
0.88299
-
RBM =
1
CJE =
13.325
fF
TF =
23.994
ps
ITF =
1.9775
mA
VJC =
0.73057
V
TR =
2.2413
ns
MJS =
0
-
XTI =
3
-
BF =
125
-
IKF =
0.4294
A
BR =
10.584
-
IKR =
0.019511
A
RB =
1.2907
RE =
0.75103
VJE =
0.7308
V
XTF =
0.44322
-
PTF =
0
deg
MJC =
0.3289
-
CJS =
0
fF
XTB =
0
-
FC =
0.50922
-
NF =
0.80012
-
ISE =
119.22
fA
NR =
0.94288
-
ISC =
4.8666
fA
IRB =
0.084011
mA
RC =
0.27137
MJE =
0.33018
-
VTF =
0.1
V
CJC =
1667
fF
XCJC =
0.29998
-
VJS =
0.75
V
EG =
1.11
eV
TNOM
300
K
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut fr Mobil-und Satellitenfunktechnik (IMST)
1996 SIEMENS AG
Package Equivalent Circuit:
LBI =
0.43
nH
LBO =
0.47
nH
LEI =
0.26
nH
LEO =
0.12
nH
LCI =
0.06
nH
LCO =
0.36
nH
CBE =
68
fF
CCB =
46
fF
CCE =
232
fF
Valid up to 6 GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
5
Dec-12-1996
BFP 196W
Total power dissipation
P
tot
=
f (T
A
*,
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C 150
T
A
,T
S
0
100
200
300
400
500
600
mW
800
P
tot
T
S
T
A
Permissible Pulse Load
R
thJS
=
f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
P
totmax
/
P
totDC
=
f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
0
10
1
10
2
10
-
P
totmax
/
P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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