Semiconductor Group
1
Dec-18-1996
BFS 17S
NPN Silicon RF Transistor
For broadband amplifiers up to 1GHz
at collector currents from 1mA to 20mA
Tape loading orientation
Type
Marking Ordering Code
Pin Configuration
Package
BFS 17S
MCs
Q62702-F1645
1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363
Maximum Ratings of any single Transistor
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CEO
15
V
Collector-base voltage
V
CBO
25
Emitter-base voltage
V
EBO
2.5
Collector current
I
C
25
mA
Peak collector current
f
10 MHz
I
CM
50
Total power dissipation
T
S
83 C
P
tot
280
mW
Junction temperature
T
j
150
C
Ambient temperature
T
A
- 65 + 150
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
240
K/W
1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm
Semiconductor Group
2
Dec-18-1996
BFS 17S
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics of any single Transistor
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
15
-
-
V
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
V
CB
= 25 V,
I
E
= 0
I
CBO
-
-
-
-
10
0.05
A
Emitter-base cutoff current
V
EB
= 2.5 V,
I
C
= 0
I
EBO
-
-
100
DC current gain
I
C
= 2 mA,
V
CE
= 1 V
I
C
= 25 mA,
V
CE
= 1 V
h
FE
20
20
70
-
-
150
-
Collector-emitter saturation voltage
I
C
= 10 mA,
I
B
= 1 mA
V
CEsat
-
0.1
0.4
V
Semiconductor Group
3
Dec-18-1996
BFS 17S
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics of any single Transistor
Transition frequency
I
C
= 2 mA,
V
CE
= 5 V,
f = 200 MHz
I
C
= 25 mA,
V
CE
= 5 V,
f = 200 MHz
f
T
1.3
1
2.5
1.4
-
-
GHz
Collector-base capacitance
V
CB
= 5 V,
f = 1 MHz
C
cb
-
0.55
0.8
pF
Collector-emitter capacitance
V
CE
= 5 V,
f = 1 MHz
C
ce
-
0.13
-
Input capacitance
V
EB
= 0.5 V,
I
C
= 0 ,
f = 1 MHz
C
ibo
-
1.45
-
Output capacitance
V
CE
= 5 V,
V
BE
=
v
be
= 0 ,
f = 1 MHz
C
obs
-
-
1.5
Noise figure
I
C
= 2 mA,
V
CE
= 5 V,
f = 800 MHz
Z
S
= 0
F
-
3.5
5
dB
Transducer gain
I
C
= 8 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
f = 900 MHz
f = 1.75 GHz
|
S
21e
|
2
-
-
12
18
-
-
Linear output voltage
I
C
= 14 mA,
V
CE
= 5 V,
d
im
= 60 dB
f
1
= 806 MHz,
f
2
= 810 MHz,
Z
S
=
Z
L
= 50
V
01
=
V
02
-
100
-
mV
Third order intercept point
I
C
= 200 mA,
V
CE
= 8 V,
f = 900 MHz
Z
S
=
Z
L
= 50
IP
3
-
23
-
dBm
Semiconductor Group
4
Dec-18-1996
BFS 17S
Total power dissipation
P
tot
=
f (T
A
*,
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C 150
T
A
,T
S
0
50
100
150
200
mW
300
P
tot
T
S
T
A
Permissible Pulse Load
R
thJS
=
f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
P
totmax
/
P
totDC
=
f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
0
10
1
10
2
10
3
10
-
P
totmax
/
P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group
5
Dec-18-1996
BFS 17S
Collector-base capacitance
C
cb
=
f (V
CB
)
V
BE
=
v
be
= 0,
f = 1MHz
0
4
8
12
16
20
V
26
V
CB
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
pF
1.3
C
cb
Transition frequency
f
T
=
f (I
C
)
V
CE
= Parameter
0
5
10
15
20
mA
30
I
C
0.0
0.5
1.0
1.5
2.0
GHz
3.0
f
T
10V
5V
3V
2V
1V
0.7V
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