BF 2030
Semiconductor Group
Mar-16-1998
1
Silicon N-Channel MOSFET Tetrode
Preliminary data
For low noise, high gain controlled
input stages up to 1GHz
Operating voltage 5V
VPS05178
2
1
3
4
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type
Marking Ordering Code
Pin Configuration
Package
BF 2030
NEs
Q62702-F1773
1 = S
2 = D
3 = G2
4 = G1
SOT-143
Maximum Ratings
Unit
Parameter
Value
Symbol
Drain-source voltage
V
DS
V
14
40
mA
Continuos drain current
I
D
Gate 1/gate 2 peak source current
I
G1/2SM
10
Gate 1 (external biasing)
+
V
G1SE
7
V
200
mW
Total power dissipation,
T
S
= 76 C
P
tot
Storage temperature
T
stg
C
-55 ...+150
Channel temperature
T
ch
150
Thermal Resistance
Channel - soldering point
370
K/W
R
thchs
Semiconductor Group
1
1998-11-01
BF 2030
Semiconductor Group
Mar-16-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Drain-source breakdown voltage
I
D
= 650 A, -
V
G1S
= 4 V, -
V
G2S
= 4 V
V
(BR)DS
-
-
V
12
Gate 1 - source breakdown voltage
+
I
G1S
= 10 mA,
V
G2S
= 0 V,
V
DS
= 0 V
+
V
(BR)G1SS
-
-
8.5
Gate 2 - source breakdown voltage
I
G2S
= 10 mA,
V
G1S
=
V
DS
= 0
V
-
-
+
V
(BR)G2SS
8.5
Gate 1 source current
V
G1S
= 6 V,
V
G2S
= 0 V
50
+
I
G1SS
-
nA
-
50
Gate 2 source leakage current
V
G2S
= 8 V,
V
G1S
= 0 V,
V
DS
= 0 V
-
-
+
I
G2SS
Drain current
V
DS
= 5 V,
V
G1S
= 0 ,
V
G2S
= 4.5 V
-
A
I
DSS
-
Drain-source current
V
DS
= 5 V,
V
G2S
= 4.5 ,
R
G1
= 20 k
12
mA
-
-
I
DSX
V
V
G2S(p)
Gate 2-source pinch-off voltage
V
DS
= 5 V,
I
D
= 100 A
-
0.8
0.3
0.3
0.7
-
Gate 1-source pinch-off voltage
V
DS
= 5 V,
V
G2S
= 4 V,
I
D
= 200 A
V
G1S(p)
AC characteristics
Forward transconductance
V
DS
= 5 V,
I
D
= 10 mA,
V
G2S
= 4 V,
f
= 1 kHz
g
fs
31
-
-
mS
3
-
Gate 1 input capacitance
V
DS
= 5 V,
I
D
= 10 mA,
V
G2S
= 4 V,
f
= 1 MHz
C
g1ss
-
pF
2.1
-
-
C
dss
Output capacitance
V
DS
= 5 V,
I
D
= 10 mA,
V
G2S
= 4 V,
f
= 1 MHz
Noise figure
V
DS
= 5 V,
I
D
= 10 mA,
f
= 800 MHz
F
-
2
-
dB
Semiconductor Group
2
1998-11-01
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