Semiconductor Group
1
Aug-02-1996
BF 517
NPN Silicon RF Transistor
For amplifier and oscillator
applications in TV-tuners
Type
Marking Ordering Code
Pin Configuration
Package
BF 517
LRs
Q62702-F42
1 = B
2 = E
3 = C
SOT-23
Maximum Ratings of any single Transistor
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CEO
15
V
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
2.5
Collector current
I
C
25
mA
Peak collector current
f
10 MHz
I
CM
50
Total power dissipation
T
S
55 C
P
tot
280
mW
Junction temperature
T
j
150
C
Ambient temperature
T
A
- 65 + 150
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
340
K/W
1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm
Semiconductor Group
2
Aug-02-1996
BF 517
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
15
-
-
V
Collector-base cutoff current
V
CB
= 15 V,
I
E
= 0
I
CBO
-
-
50
nA
DC current gain
I
C
= 5 mA,
V
CE
= 10 V
h
FE
25
-
250
-
Collector-emitter saturation voltage
I
C
= 10 mA,
I
B
= 1 mA
V
CEsat
-
0.1
0.5
V
AC Characteristics of any single Transistor
Transition frequency
I
C
= 5 mA,
V
CE
= 10 V,
f = 200 MHz
f
T
1
2
-
GHz
Collector-base capacitance
V
CB
= 5 V,
V
BE
=
v
be
= 0 ,
f = 1 MHz
C
cb
0.3
0.55
0.75
pF
Collector-emitter capacitance
V
CE
= 5 V,
V
BE
=
v
be
= 0 ,
f = 1 MHz
C
ce
-
0.25
0.4
Input capacitance
V
EB
= 0.5 V,
I
C
=
i
c
= 0 ,
f = 1 MHz
C
ibo
-
1.45
-
Output capacitance
V
CE
= 5 V,
V
BE
=
v
be
= 0 ,
f = 1 MHz
C
obs
-
0.8
-
Noise figure
I
C
= 5 mA,
V
CE
= 10 V,
f = 100 MHz
Z
S
= 75
F
-
2.5
-
dB
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