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Электронный компонент: Q62702-F496

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Semiconductor Group
1
PNP Silicon Transistors
BF 421
With High Reverse Voltage
BF 423
5.91
Maximum Ratings
Type
Ordering Code
Marking
Package
1)
Pin Configuration
BF 421
BF 423
Q62702-F532
Q62702-F496
TO-92
1
2
3
E
C
B
1)
For detailed information see chapter Package Outlines.
2)
Mounted on Al heat sink 15 mm
25 mm
0.5 mm.
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
V
Collector current
I
C
mA
Junction temperature
T
j
C
Total power dissipation,
T
C
= 88 C
P
tot
mW
Storage temperature range
T
stg
Collector-emitter voltage
R
BE
= 2.7 k
V
CER
Thermal Resistance
Junction - ambient
R
th JA
150
K/W
50
830
150
65 ... + 150
Collector-base voltage
V
CB0
250
300
BF 421
BF 423
Peak base current
I
BM
100
300
250
Emitter-base voltage
V
EB0
5
Junction - case
2)
R
th JC
75
q
High breakdown voltage
q
Low collector-emitter saturation voltage
q
Low capacitance
q
Complementary types: BF 420, BF 422 (NPN)
1
2
3
Semiconductor Group
2
BF 421
BF 423
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
A
Collector cutoff current
V
CE
= 200 V,
R
BE
= 2.7 k ,
T
A
= 150 C
I
CER
10
V
Collector-emitter breakdown voltage
I
C
= 1 mA
BF 423
V
(BR)CE0
250
nA
Collector cutoff current
V
CB
= 200 V
I
CB0
10
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 10
A
BF 421
BF 423
V
(BR)CB0
300
250


Emitter-base breakdown voltage,
I
E
= 10
A
V
(BR)EB0
5
V
Collector-emitter saturation voltage
1)
I
C
= 25 mA,
T
j
=150 C
V
CEsatRF
20
DC current gain
I
C
= 100
A,
V
CE
= 20 V
I
C
= 25 mA,
V
CE
= 20 V
h
FE
15
50


Emitter cutoff current,
V
EB
= 5 V
I
EB0
10
MHz
Transition frequency
I
C
= 20 mA,
V
CE
= 10 V,
f
= 20 MHz
f
T
100
AC characteristics
pF
Output capacitance
V
CB
= 30 V,
f
= 1 MHz
C
obo
0.8
Collector-emitter breakdown voltage
I
C
= 10
A,
R
BE
= 2.7 k
BF 421
V
(BR)CER
300
1)
Pulse test:
t
300
s,
D
2 %.
Semiconductor Group
3
BF 421
BF 423
Total power dissipation
P
tot
=
f
(
T
A
;
T
C
)
Permissible pulse load
R
thJA
=
f
(
t
p
)
Collector current
I
C
=
f
(
V
BE
)
V
CE
= 20 V,
T
A
= 25 C
Collector cutoff current
I
CB0
=
f
(
T
A
)
V
CB
= 200 V
Semiconductor Group
4
BF 421
BF 423
DC current gain
h
FE
=
f
(
I
C
)
V
CE
= 20 V,
T
A
= 25 C
Output capacitance
C
obo
=
f
(
V
CB
)
I
C
= 0,
f
= 1 MHz
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 10 V,
f
= 20 MHz