PNP Silicon Transistors
BFP 23
with High Reverse Voltage
BFP 26
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BFP 23
BFP 26
Q62702-F622
Q62702-F722
TO-92
1
2
3
E
B
C
1)
For detailed information see chapter Package Outlines.
2)
Mounted on Al heat sink 15 mm
25 mm
0.5 mm.
Parameter
Symbol
BFP 23
Unit
Collector-emitter voltage
V
CE0
200
V
Collector-base voltage
V
CB0
200
Emitter-base voltage
V
EB0
Collector current
I
C
mA
Base current
I
B
Total power dissipation,
T
C
= 66 C
P
tot
mW
Junction temperature
T
j
C
Storage temperature range
T
stg
65 ... + 150
Thermal Resistance
Junction - ambient
R
th JA
200
K/W
Peak collector current
I
CM
Peak base current
I
BM
BFP 26
300
300
200
100
625
150
500
200
Values
6
Junction - case
2)
R
th JC
135
q
High breakdown voltage
q
Low collector-emitter saturation voltage
q
Low capacitance
q
Complementary types: BFP 22, BFP 25 (NPN)
1
2
3
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
V
Collector-emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 2 mA
BFP 23
BFP 26
V
CEsat
0.4
0.5
Base-emitter saturation voltage
1)
I
C
= 20 A,
I
B
= 2 mA
V
BEsat
0.9
MHz
Transition frequency
I
C
= 20 mA,
V
CE
= 10 V,
f
= 20 MHz
f
T
70
AC characteristics
V
Collector-emitter breakdown voltage
I
C
= 1 mA
BFP 23
BFP 26
V
(BR)CE0
200
300
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 100
A
BFP 23
BFP 26
V
(BR)CB0
200
300
Emitter-base breakdown voltage
I
E
= 100
A
V
(BR)EB0
6
nA
Emitter-base cutoff current
V
EB
= 3 V
I
EB0
100
nA
nA
A
A
Collector-base cutoff current
V
CB
= 160 V
BFP 23
V
CB
= 250 V
BFP 26
V
CB
= 160 V,
T
A
= 150 C
BFP 23
V
CB
= 250 V,
T
A
= 150 C
BFP 26
I
CB0
100
100
20
20
DC current gain
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
1)
I
C
= 30 mA,
V
CE
= 10 V
1)
BFP 23
BFP 26
h
FE
25
40
30
25
pF
Output capacitance
V
CB
= 30 V,
f
= 1 MHz
C
obo
1.5
1)
Pulse test conditions:
t
300
s,
D
2 %.
BFP 23
BFP 26
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