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Электронный компонент: Q62702-F804

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PNP Silicon RF Transistor
BFQ 76
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings
Type
Marking
Package
1)
Pin Configuration
BFQ 76
Q62702-F804
76
Cerec-X
1
2
3
4
B
E
C
E
Ordering Code
(tape and reel)
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
15
V
Emitter-base voltage
V
EB0
2
Collector current
I
C
30
mA
Collector-base voltage
V
CB0
20
Junction temperature
T
j
175
C
Ambient temperature range
T
A
65 ... + 175
Total power dissipation,
T
S
116 C
3)
P
tot
250
mW
Storage temperature range
T
stg
65 ... + 175
Thermal Resistance
Junction - ambient
2)
R
th JA
315
K/W
Junction - soldering point
3)
R
th JS
235
1)
For detailed dimensions see chapter Package Outlines.
2)
Package mounted on alumina 15 mm
16.7 mm
0.7 mm.
3)
T
S
is measured on the collector lead at the soldering point to the pcb.
q
For broadband amplifiers up to 2 GHz
at collector currents up to 20 mA.
q
Complementary type: BFQ 71 (NPN).
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC Characteristics
V
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CE0
15
A
Emitter-base cutoff current
V
EB
= 2 V,
I
C
= 0
I
EB0
10
DC current gain
I
C
= 14 mA,
V
CE
= 10 V
h
FE
20
50
nA
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
I
CB0
50
AC Characteristics
Power gain
I
C
= 14 mA,
V
CE
= 10 V,
f
= 800 MHz,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
G
pe
17
GHz
Transition frequency
I
C
= 14 mA,
V
CE
= 10 V,
f
= 500 MHz
f
T
5
Output capacitance
V
CE
= 10 V,
V
BE
=
v
be
= 0,
f
= 1 MHz
C
obs
0.9
dB
Noise figure
I
C
= 5 mA,
V
CE
= 6 V,
f
= 10 MHz,
Z
S
= 75
I
C
= 4 mA,
V
CE
= 10 V,
f
= 800 MHz,
Z
S
=
Z
Sopt
F

1.8
2.5

pF
Collector-base capacitance
V
CB
= 10 V,
V
BE
=
v
be
= 0,
f
= 1 MHz
C
cb
0.55
Input capacitance
V
EB
= 0.5 V,
I
C
=
i
c
= 0,
f
= 1 MHz
C
ibo
1.2
BFQ 76
Total power dissipation
P
tot
=
f
(
T
A
*;
T
S
)
*Package mounted on alumina
Collector-base capacitance
C
cb
=
f
(
V
CB
)
V
BE
=
v
be
= 0,
f
= 1 MHz
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 10 V,
f
= 200 MHz
BFQ 76
BFQ 76
Noise figure
F
=
f
(
I
C
)
V
CE
= 10 V,
f
= 10 MHz
Noise figure
F
=
f
(
I
C
)
V
CE
= 10 V,
f
= 900 MHz