Semiconductor Group
1
NPN Silicon RF Transistor
BF 799
q
For linear broadband amplifier
applications up to 500 MHz
q
SAW filter driver in TV tuners
Maximum Ratings
Type
Marking
Package
1)
Pin Configuration
BF 799
Q62702-F935
LK
SOT-23
1
2
3
B
E
C
Ordering Code
(tape and reel)
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
20
V
Collector-base voltage
V
CB0
30
Emitter-base voltage
V
EB0
3
Thermal Resistance
Junction - ambient
2)
R
th JA
450
K/W
Total power dissipation,
T
A
25 C
P
tot
280
mW
Storage temperature range
T
stg
65 ... + 150
Peak base current
I
BM
15
Junction temperature
T
j
150
C
Collector current
I
C
35
mA
Collector-emitter reverse voltage
V
CES
30
Peak collector current
I
CM
50
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm
16.7 mm
0.7 mm.
07.94
Semiconductor Group
2
BF 799
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC Characteristics
V
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR) CE0
20
nA
Collector cutoff current
V
CB
= 20 V
I
CB0
100
DC current gain,
V
CE
= 10 V
I
C
= 5 mA
I
C
= 20 mA
h
FE
35
40
95
100
250
Collector-base breakdown voltage
I
C
= 10
A,
I
E
= 0
V
(BR) CB0
30
Emitter-base breakdown voltage
I
E
= 10
A
V
(BR) EB0
3
V
Collector-emitter saturation voltage
I
C
= 20 mA,
I
B
= 2 mA
V
CE sat
0.15
0.5
Base-emitter saturation voltage
I
C
= 20 mA,
I
B
= 2 mA
V
BE sat
0.95
MHz
Transition frequency
I
C
= 5 mA,
V
CE
= 10 V,
f
= 100 MHz
I
C
= 20 mA,
V
CE
= 8 V,
f
= 100 MHz
f
T
800
1100
pF
Output capacitance
V
CB
= 10 V,
f
= 1 MHz,
I
E
= 0
C
ob
0.96
Collector-base capacitance
V
CB
= 10 V,
V
BE
= 0 V,
f
= 1 MHz
C
cb
0.7
S
Output conductance
I
C
= 20 mA,
V
CE
= 10 V,
f
= 35 MHz
g
22e
60
dB
Noise figure
I
C
= 5 mA,
V
CE
= 10 V,
f
= 100 MHz
R
S
= 50
F
3
Collector-emitter capacitance
V
CE
= 10 V,
V
BE
= 0 V,
f
= 1 MHz
C
ce
0.28
AC Characteristics
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