Semiconductor Group
1
PNP Silicon High-Voltage Transistors
BFN 25
BFN 27
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BFN 25
BFN 27
Q62702-F1066
Q62702-F977
FKs
FLs
SOT-23
B
E
C
1
2
3
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
Parameter
Symbol
Values
Unit
Emitter-base voltage
V
EB0
Collector-base voltage
V
CB0
Junction temperature
T
j
C
Total power dissipation,
T
S
= 74 C
P
tot
mW
Storage temperature range
T
stg
Collector-emitter voltage
V
CE0
V
Thermal Resistance
Junction - ambient
2)
R
th JA
280
K/W
5
360
150
65 ... + 150
250
300
BFN 25
BFN 27
Collector current
I
C
mA
200
Peak collector current
I
CM
500
Junction - soldering point
R
th JS
210
250
300
Base current
I
B
100
Peak base current
I
BM
200
q
Suitable for video output stages in TV sets
and switching power supplies
q
High breakdown voltage
q
Low collector-emitter saturation voltage
q
Complementary types: BFN 24, BFN 26 (NPN)
5.91
Semiconductor Group
2
BFN 25
BFN 27
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
DC current gain
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
1)
I
C
= 30 mA,
V
CE
= 10 V
1)
BFN 25
BFN 27
h
FE
25
40
40
30
V
Collector-emitter breakdown voltage
I
C
= 1 mA
BFN 25
BFN 27
V
(BR)CE0
250
300
nA
nA
A
A
Collector-base cutoff current
V
CB
= 200 V
BFN 25
V
CB
= 250 V
BFN 27
V
CB
= 200 V,
T
A
= 150 C
BFN 25
V
CB
= 250 V,
T
A
= 150 C
BFN 27
I
CB0
100
100
20
20
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Emitter-base breakdown voltage
I
E
= 100
A
V
(BR)EB0
5
V
Collector-emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 2 mA
BFN 25
BFN 27
V
CEsat
0.4
0.5
MHz
Transition frequency
I
C
= 20 mA,
V
CE
= 10 V,
f
= 20 MHz
f
T
100
AC characteristics
pF
Output capacitance
V
CB
= 30 V,
f
= 1 MHz
C
obo
2.5
Collector-base breakdown voltage
I
C
= 100
A
BFN 25
BFN 27
V
(BR)CB0
250
300
nA
Emitter-base cutoff current
V
EB
= 3 V
I
EB0
100
Base-emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 2 mA
V
BEsat
0.9
1)
Pulse test conditions:
t
300
s,
D
= 2 %.
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