Semiconductor Group
1
PNP Silicon RF Transistor
BF 660
q
For VHF oscillator applications
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BF 660
Q62702-F982
LEs
SOT-23
1
2
3
B
E
C
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
30
V
Collector-base voltage
V
CB0
40
Emitter-base voltage
V
EB0
4
Thermal Resistance
Junction - ambient
2)
R
th JA
450
K/W
Total power dissipation,
T
A
25 C
P
tot
280
mW
Storage temperature range
T
stg
65 ... + 150
Emitter current
I
E
30
Junction temperature
T
j
150
C
Collector current
I
C
25
mA
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm
16.7 mm
0.7 mm.
07.94
Semiconductor Group
2
BF 660
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC Characteristics
AC Characteristics
V
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR) CE0
30
nA
Collector cutoff current
V
CB
= 20 V,
I
E
= 0
I
CB0
50
DC current gain
I
C
= 3 mA,
V
CE
= 10 V
h
FE
30
Collector-base breakdown voltage
I
C
= 10
A,
I
E
= 0
V
(BR) CB0
40
Emitter-base breakdown voltage
I
E
= 10
A,
I
C
= 0
V
(BR) EB0
4
MHz
Transition frequency
I
C
= 5 mA,
V
CE
= 10 V,
f
= 100 MHz
f
T
700
pF
Collector-base capacitance
V
CB
= 10 V,
V
BE
= 0 V,
f
= 1 MHz
C
cb
0.6
Collector-emitter capacitance
V
CE
= 10 V,
V
BE
= 0 V,
f
= 1 MHz
C
ce
0.28
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