BGA 420
Semiconductor Group
Jul-13-1998
1
in SIEGET
25-Technologie
Si-MMIC-Amplifier
Preliminary data
Cascadable 50
-gain block
Unconditionally stable
Gain |
S
21
|
2
= 13 dB at 1.8 GHz
IP
3out
= +9 dBm at 1.8 GHz
(
V
D
= 3 V,
I
D
= typ. 6.4 mA)
Noise figure
NF = 2.2 dB at 1.8 GHz
Reverse isolation > 28 dB and
return loss
IN / OUT > 12 dB at 1.8 GHz
VPS05605
4
2
1
3
EHA07385
D
V
4
2
1
IN
OUT
3
GND
Circuit Diagram
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BGA 420
BLs
Q62702-G0057
1, IN
2, GND
3, OUT
4, VD
SOT-343
Maximum Ratings
Parameter
Symbol
Value
Unit
Device current
I
D
15
mA
Device voltage
V
D
V
6
Total power dissipation, TS
tbd C
P
tot
90
mW
R
F
input power
P
RFin
0
dBm
Junction temperature
T
j
150
C
Ambient temperature
T
A
-65 ...+150
Storage temperature
T
stg
-65 ...+150
Thermal Resistance
tbd
Junction - soldering point
1)
R
thJS
K/W
1)
T
S
is measured on the emitter (GND) lead at the soldering point to the pcb
Semiconductor Group
1
1998-11-01
BGA 420
Semiconductor Group
Jul-13-1998
2
Electrical Characteristics at
T
A
= 25 C, unless otherwise specified.
Parameter
Values
Symbol
Unit
typ.
min.
max.
AC characteristics
6.7
5.4
I
D
8
Device current
mA
19
17
13
-
-
-
|
S
21
|
2
17
15
11
Insertion power gain
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
dB
28
-
S12
25
Reverse isolation
f = 1.8 GHz
1.9
2
2.2
Noise figure
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
2.2
2.3
2.5
NF
-
-
-
9
IP
3out
7.5
Intercept point at the output
f = 1 GHz
-
dBm
-1
-
P
-1dB
-2.5
1dB compression point
f = 1 GHz
Return loss input
f = 1.8 GHz
8
11
dB
-
RL
in
Return loss output
f = 1.8 GHz
RL
out
12
16
-
Typical biasing configuration
EHA07386
100 pF
RF IN
100 pF
GND
RF OUT
10 nF
100 pF
+
3
1
2
4
D
V
BGA 420
Note: 1) Large-value capacitors should be connected from pin 4 to ground right at the device
to provide a low impedance path!
2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin
boards are recommended to minimize the parasitic inductance to ground!
Semiconductor Group
2
1998-11-01
BGA 420
Semiconductor Group
Jul-13-1998
3
Typical S-Parameters at
T
A
= 25 C
f
S
11
S
21
S
12
S
22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
V
D
= 3 V,
Z
o
= 50
0.1
0.5
0.8
1
1.5
1.8
1.9
2
2.4
3
0.5686
0.5066
0.4404
0.3904
0.2841
0.2343
0.2136
0.2062
0.1688
0.1558
-8.5
-19.2
-28.7
-34.6
-50.5
-60.6
-64.1
-68.4
-89.7
-104.9
9.314
8.393
7.352
6.69
5.244
4.567
4.355
4.165
3.417
2.861
170.6
149.4
135.2
126.8
111.1
104
102
99.7
91.7
85.3
0.0268
0.0248
0.0236
0.024
0.0314
0.0378
0.0406
0.0426
0.0549
0.0682
12.7
11.7
25.6
35.9
57.2
63.5
66.1
67.2
71.4
73.1
0.2808
0.2613
0.2361
0.2144
0.1398
0.0979
0.0838
0.0689
0.0224
0.0284
-8.6
-3.8
-6.7
-9
-15
-18.2
-21.5
-22.2
-48
-147.5
Spice-model BGA 420
EHA07387
3
R
R
1
P1
C
P2
C
1
C
R
2
P3
C
C
P4
11
13
14
12
including parasitics
OUT
BGA 420-chip
IN
GND
+
V
T1
T1
T501
R
1
14.5k
R
2
140
R
3
2.4k
C
1
2.3pF
C
P1
0.2pF
C
P2
0.2pF
C
P3
0.6pF
C
P4
0.1pF
Semiconductor Group
3
1998-11-01
BGA 420
Semiconductor Group
Jul-13-1998
4
Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) :
BF =
83.23
-
IKF =
0.16493
A
BR =
10.526
-
IKR =
0.25052
A
RB =
15
RE =
1.9289
VJE =
0.70367
V
XTF =
0.3641
-
PTF =
0
deg
MJC =
0.48652
-
CJS =
0
fF
XTB =
0
-
FC =
0.99469
-
NF =
1.0405
-
ISE =
15.761
fA
NR =
0.96647
-
ISC =
0.037223
fA
IRB =
0.21215
mA
RC =
0.12691
MJE =
0.37747
-
VTF =
0.19762
V
CJC =
96.941
fF
XCJC =
0.08161
-
VJS =
0.75
V
EG =
1.11
eV
TNOM
300
K
IS =
0.21024
aA
VAF =
39.251
V
NE =
1.7763
-
VAR =
34.368
V
NC =
1.3152
-
RBM =
1.3491
CJE =
3.7265
fF
TF =
4.5899
ps
ITF =
1.3364
mA
VJC =
0.99532
V
TR =
1.4935
ns
MJS =
0
-
XTI =
3
-
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :
RS =
20
IS =
2
fA
N =
1.02
-
All parameters are ready to use, no scalling is necessary
Package Equivalent Circuit:
L
BI
=
0.36
nH
L
BO
=
0.4
nH
L
EI
=
0.3
nH
L
EO
=
0.15
nH
L
CI
=
0.36
nH
L
CO
=
0.4
nH
C
BE
=
95
fF
C
CB
=
6
fF
C
CE
=
132
fF
C
1
=
28
fF
C
2
=
88
fF
C
3
=
8
fF
L
1
=
0.6
nH
L
2
=
0.4
nH
EHA07388
L
BI
1
C
BE
C
BO
L
OUT
EI
L
L
EO
CB
C
CI
L
C
3
CO
L
CE
C
Chip
C'-E'-
IN
Diode
C
2
2
L
L
1
GND
+
V
12
13
14
11
BGA 420
Valid up to 3GHz
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut fr Mobil-und Satellitentechnik (IMST)
1996 SIEMENS AG
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
1998-11-01
BGA 420
Semiconductor Group
Jul-13-1998
5
Insertion power gain |
S
21
|
2
=
f (f)
V
D
= 3 V
T
A
= parameter
10
-1
10
0
10
1
GHz
f
0
2
4
6
8
10
12
14
16
18
dB
22
|
S
21
|
2
TA=-20C
TA=+25C
TA=+75C
Insertion power gain |
S
21
|
2
=
f (f)
V
D
,
I
D
= parameter
10
-1
10
0
10
1
GHz
f
0
5
10
15
dB
25
|
S
21
|
2
VD=5V, ID=12.4mA
VD=4V, ID=9.4mA
VD=3V, ID=6.4mA
VD=2V, ID=3,4mA
Noise figure
NF = f (f)
V
D
,
I
D
= parameter
10
-1
10
0
10
1
GHz
f
0
1
2
3
dB
5
NF
VD=5V, ID=12.4mA
VD=3V, ID=6.4mA
Noise figure
NF = f (f)
V
D
= 3V
T
A
= parameter
10
-1
10
0
10
1
GHz
f
0.0
0.5
1.0
1.5
2.0
2.5
dB
3.5
NF
TA=+75C
TA=+25C
TA=-20C
Semiconductor Group
5
1998-11-01
BGA 420
Semiconductor Group
Jul-13-1998
6
Intercept point at the output
IP
3out
=
f (f)
V
D
,
I
D
= parameter
10
-1
10
0
10
1
GHz
f
0
2
4
6
8
10
12
14
16
dBm
20
IP
3out
VD=5V, ID=12.4mA
VD=4V, ID=9.4mA
VD=3V, ID=6.4mA
VD=2V, ID=3.4mA
Intercept point at the output
IP
3out
=
f (f), V
D
= 3V
T
A
= parameter
10
-1
10
0
10
1
GHz
f
0
1
2
3
4
5
6
7
8
9
10
dBm
12
IP
3out
TA=-20C
TA=+25C
TA=75C
Semiconductor Group
6
1998-11-01
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