GaAs FET
CLY 15
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 1/7
09/96
HL EH PD 21
D a t a s h e e t
* Power amplifier for mobile phones
* For frequencies from 400 MHz to 2.5 GHz
* Operating voltage range: 2.7 to 6 V
* P
OUT
at V
D
=3V, f=1.8 GHz typ. 31.5 dBm
* Efficiency better 50%
ESD:
Electrostatic discharge sensitive device,
observe handling precautions!
S
S
G
D
Type
Marking
Ordering code
(taped)
Package 1)
CLY 15
CLY 15
Q62702-L99
SOT 223
Maximum ratings
Symbol
Unit
Drain-source voltage
VDS
9
V
Drain-gate voltage
VDG
12
V
Gate-source voltage
VGS
-6
V
Drain current
ID
5
A
Channel temperature
TCh
150
C
Storage temperature
Tstg
-55...+150
C
Total power dissipation
(Ts < 80C)
Ts: Temperature at soldering point
Ptot
4.7
W
Thermal resistance
Channel-soldering point (GND)
RthChS
< 15
K/W
1)
Dimensions see chapter Package Outlines
GaAs FET
CLY 15
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 2/7
09/96
HL EH PD 21
Electrical characteristics (TA = 25C , unless otherwise specified)
Characteristics
Symbol
min
typ
max
Unit
Drain-source saturation current *)
VDS = 3V
VGS = 0V
IDSS
2.4
3.2
4.8
A
Cut-off current
VDS = 3V
VGS = -3.8V
ID
-
-
400
A
Gate cut-off current
VDS = 3V
VGS = -3.8V
IG
-
20
70
A
Pinch-off Voltage
VDS=3V ID=400A
VGS(p)
-3.8
-2.8
-1.8
V
Small Signal Gain *)
VDS = 3V
ID = 1.4A
f = 1.8GHz
Pin = 5dBm
G
-
6
-
dB
Output Power *)
VDS = 3V
ID = 1.4A
f = 1.8GHz
Pin = 29dBm
Po
32
32.5
-
dBm
Output Power *)
VDS = 5V
ID = 1.4A
f = 1.8GHz
Pin = 30 dBm
Po
34.5
35
-
dBm
1dB-Compression Point *)
VDS = 3V
ID = 1.4A f = 1.8GHz
P1dB
-
31.5
-
dBm
1dB-Compression Point *)
VDS = 5V
ID = 1.4A f = 1.8GHz
P1dB
-
34.5
-
dBm
Power Added Efficiency *)
VDS = 3V
ID = 1.4A
f = 1.8GHz
Pin = 29dBm
D
45
50
-
%
*) pulsed measurement; duty cycle 1:10; ton = 1ms, power matching conditions.
GaAs FET
CLY 15
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 3/7
09/96
HL EH PD 21
Power Characteristics
Pin [dBm]
0
5
10
15
20
25
30
35
-5
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
Pout
PAE
@ 3V/1.4A
Power Characteristics
Output Charateristics
VDS [V]
ID [A]
0
0,5
1
1,5
2
2,5
3
0
0,5
1
1,5
2
2,5
3
3,5
4
4,5
5
VGS = 0V
VGS = -0.5V
VGS = -1V
VGS = -1.5V
VGS = -2V
Pin [dBm]
Pout [dBm]
0
5
10
15
20
25
30
35
40
-5
0
5
10
15
20
25
30
35
0
10
20
30
40
50
60
70
80
PAE [%]
P out
P AE
@ 5V/1.4A
GaAs FET
CLY 15
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 4/7
09/96
HL EH PD 21
typ. Common Source S-Parameter
VDS = 3V ID=1.4A
Zo=50
f S11
S21
S12
S22
GHz MAG ANG MAG ANG MAG ANG MAG ANG
0.200
0.91
-150.9
5.69
99.7
0.01
48.5
0.90
176.0
0.250
0.91
-160.6
4.63
93.5
0.02
45.9
0.87
173.8
0.300
0.90
-167.9
3.89
88.7
0.02
46.8
0.88
171.8
0.350
0.90
-173.7
3.34
84.6
0.02
47.4
0.87
170.8
0.400
0.90
-178.7
2.92
80.9
0.02
47.5
0.87
168.8
0.450
0.90
176.9
2.60
77.5
0.02
47.6
0.87
167.3
0.500
0.90
173.0
2.34
74.6
0.02
48.1
0.87
165.8
0.550
0.90
169.5
2.12
71.4
0.02
47.7
0.87
164.2
0.600
0.90
166.1
1.95
68.7
0.03
47.0
0.87
162.8
0.650
0.90
163.1
1.79
66.1
0.03
47.1
0.87
161.2
0.700
0.90
160.0
1.66
63.5
0.03
46.6
0.87
159.7
0.750
0.90
157.2
1.54
60.9
0.03
45.6
0.87
158.3
0.800
0.90
154.6
1.45
58.6
0.03
45.0
0.87
156.9
0.850
0.90
152.0
1.36
56.1
0.03
43.9
0.87
155.6
0.900
0.90
149.3
1.28
53.8
0.04
43.0
0.87
154.0
0.950
0.90
146.9
1.21
51.5
0.04
41.9
0.87
152.6
1.000
0.90
144.5
1.15
49.0
0.04
41.0
0.87
151.3
1.200
0.91
135.2
0.95
40.3
0.05
36.1
0.87
145.8
1.400
0.91
126.7
0.81
31.8
0.05
31.9
0.88
140.1
1.600
0.92
118.5
0.70
23.8
0.06
26.1
0.88
134.7
1.800
0.92
110.6
0.61
16.3
0.06
20.8
0.88
129.7
2.000
0.93
103.2
0.55
8.7
0.06
15.6
0.89
124.3
2.200
0.93
96.3
0.49
2.1
0.07
10.4
0.88
119.1
2.400
0.93
89.3
0.44
-4.1
0.07
5.2
0.90
114.4
2.600
0.94
82.8
0.40
-10.0
0.07
0.2
0.90
109.3
2.800
0.94
77.0
0.37
-14.9
0.07
-4.2
0.90
104.5
3.000
0.94
71.3
0.34
-19.6
0.08
-9.7
0.91
99.8
3.200
0.93
66.0
0.32
-23.4
0.08
-15.0 0.92
95.1
3.400
0.92
61.6
0.31
-26.8
0.08
-19.4 0.93
90.8
3.600
0.91
57.3
0.30
-29.7
0.07
-23.7 0.92
87.0
3.800
0.90
53.1
0.31
-33.1
0.07
-28.1 0.93
83.1
4.000
0.89
49.2
0.32
-38.1
0.07
-31.9 0.93
79.8
4.200
0.86
46.4
0.34
-44.9
0.07
-35.4 0.92
76.4
4.400
0.83
44.7
0.36
-55.4
0.07
-37.5 0.92
73.4
4.600
0.89
44.2
0.07
-36.2
0.07
-38.1 0.92
71.0
4.800
0.83
43.7
0.34
-80.6
0.07
-39.4 0.92
68.2
5.000
0.85
42.2
0.30
-92.1
0.07
-40.3 0.92
65.2
5.200
0.88
39.4
0.27
-100.8
0.07
-42.5 0.92
62.2
5.400
0.89
36.5
0.24
-107.8
0.07
-45.0 0.92
58.7
5.600
0.90
33.1
0.22
-113.6
0.07
-48.6 0.92
55.7
5.800
0.91
29.6
0.19
-118.9
0.07
-51.4 0.92
52.1
6.000
0.92
26.4
0.18
-124.4
0.07
-54.4 0.92 48.0
GaAs FET
CLY 15
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 5/7
09/96
HL EH PD 21
typ. Common Source S-Parameter
VDS = 5V ID=1.4A
Zo=50
f S11
S21
S12
S22
GHz MAG ANG MAG ANG MAG ANG MAG ANG
0.200
0.90
-151.1
7.61
98.8
0.01
46.5
0.84
176.7
0.250
0.89
-160.6
6.18
92.4
0.02
43.4
0.82
174.7
0.300
0.89
-167.8
5.19
87.5
0.02
46.5
0.82
172.9
0.350
0.89
-173.7
4.45
83.3
0.02
46.0
0.82
171.8
0.400
0.88
-178.7
3.90
79.4
0.02
46.5
0.82
169.7
0.450
0.89
177.0
3.47
75.9
0.02
47.3
0.82
168.3
0.500
0.88
173.2
3.11
72.8
0.02
47.9
0.82
166.7
0.550
0.88
169.6
2.82
69.5
0.02
47.8
0.82
165.5
0.600
0.89
166.4
2.59
66.6
0.03
47.4
0.82
163.9
0.650
0.88
163.1
2.38
63.9
0.03
47.4
0.82
162.6
0.700
0.89
160.3
2.20
61.1
0.03
46.5
0.82
161.0
0.750
0.89
157.5
2.05
58.4
0.03
45.6
0.82
159.6
0.800
0.89
154.9
1.91
55.9
0.03
45.3
0.82
158.0
0.850
0.89
152.1
1.79
53.2
0.03
44.8
0.82
156.8
0.900
0.89
149.7
1.69
50.7
0.03
43.9
0.82
155.4
0.950
0.89
147.1
1.59
48.4
0.04
42.7
0.82
154.1
1.000
0.89
144.7
1.51
45.7
0.04
42.0
0.82
152.8
1.200
0.89
135.5
1.24
36.2
0.04
37.8
0.83
147.3
1.400
0.90
127.1
1.04
27.1
0.05
32.2
0.83
141.9
1.600
0.91
119.1
0.90
18.3
0.05
27.4
0.84
136.8
1.800
0.92
111.1
0.78
10.1
0.06
22.5
0.84
131.6
2.000
0.92
103.7
0.68
2.1
0.06
18.2
0.85
126.3
2.200
0.93
96.6
0.61
-5.1
0.06
12.5
0.86
121.3
2.400
0.93
89.8
0.54
-12.0
0.07
7.3
0.86
116.1
2.600
0.93
83.2
0.48
-18.6
0.07
2.6
0.87
111.4
2.800
0.93
77.3
0.43
-24.0
0.07
-2.6
0.88
106.3
3.000
0.93
71.8
0.39
-29.3
0.07
-7.2
0.89
101.8
3.200
0.92
66.6
0.37
-33.5
0.07
-12.1 0.90
97.2
3.400
0.92
61.8
0.34
-37.2
0.07
-16.8 0.91
92.5
3.600
0.91
57.9
0.32
-40.5
0.07
-21.1 0.91
88.8
3.800
0.90
54.1
0.32
-43.9
0.07
-24.9 0.92
85.1
4.000
0.88
50.5
0.31
-48.3
0.07
-27.6 0.92
81.4
4.200
0.87
47.8
0.32
-53.8
0.07
-31.5 0.92
78.1
4.400
0.86
45.7
0.32
-60.9
0.07
-33.4 0.92
74.9
4.600
0.85
43.4
0.32
-68.9
0.07
-35.4 0.92
72.2
4.800
0.85
42.3
0.31
-77.5
0.07
-37.2 0.92
69.3
5.000
0.86
40.3
0.30
-86.7
0.07
-39.3 0.92
66.2
5.200
0.87
37.7
0.28
-94.5
0.07
-41.6 0.92
63.1
5.400
0.88
35.2
0.26
-101.8
0.07
-44.0 0.92
59.6
5.600
0.89
32.1
0.24
-108.4
0.08
-48.5 0.92
56.6
5.800
0.90
29.0
0.22
-114.5
0.08
-50.3 0.92
53.0
6.000
0.90
26.0
0.21
-121.1
0.08
-54.0 0.93
49.0
GaAs FET
CLY 15
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 6/7
09/96
HL EH PD 21
GaAs FET
CLY 15
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 7/7
09/96
HL EH PD 21
PDF 
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