Semiconductor Group
1
PNP Silicon Transistor
SMBTA 70
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
SMBTA 70
Q62702-M0003
s2C
SOT-23
B
E
C
1
2
3
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
40
V
Collector current
I
C
100
mA
Total power dissipation,
T
S
= 71 C
P
tot
330
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
65 ... + 150
Thermal Resistance
Junction - ambient
2)
R
th JA
310
K/W
Junction - soldering point
R
th JS
240
Emitter-base voltage
V
EB0
4
Peak collector current
I
CM
200
Peak base current
I
BM
100
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
q
For AF input stages and driver applications
q
High current gain
q
Low collector-emitter saturation voltage
5.91
Semiconductor Group
2
SMBTA 70
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
V
Collector-emitter breakdown voltage
I
C
= 1 mA
V
(BR)CE0
40
Emitter-base breakdown voltage
I
E
= 100
A
V
(BR)EB0
4
nA
A
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0
V
CB
= 30 V,
I
E
= 0,
T
A
= 150 C
I
CB0
100
20
DC current gain
I
C
= 5 mA
, V
CE
= 10 V
h
FE
40
400
V
Collector-emitter saturation voltage
1)
I
C
= 10 mA
, I
B
= 1 mA
V
CEsat
0.25
nA
Emitter-base cutoff current
V
EB
= 4 V,
I
C
= 0
I
EB0
20
MHz
Transition frequency
I
C
= 5 mA
, V
CE
= 10 V,
f
= 100 MHz
f
T
125
pF
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
4
AC characteristics
1)
Pulse test conditions:
t
300
s,
D
2 %.
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