Semiconductor Group
1
NPN Silicon Darlington Transistors
BSP 50
... BSP 52
5.91
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
BSP 50
BSP 51
BSP 52
Q62702-P1163
Q62702-P1164
Q62702-P1165
BSP 50
BSP 51
BSP 52
SOT-223
Pin Configuration
1
2
3
4
B
C
E
C
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
Parameter
Symbol
Values
Unit
Emitter-base voltage
V
EB0
Collector-base voltage
V
CB0
Junction temperature
T
j
C
Total power dissipation,
T
S
= 124 C
P
tot
W
Storage temperature range
T
stg
Collector-emitter voltage
V
CER
V
Thermal Resistance
Junction - ambient
2)
R
th JA
72
K/W
5
1.5
150
65 ... + 150
45
60
BSP 50 BSP 51
80
BSP 52
Collector current
I
C
A
1
Peak collector current
I
CM
2
Junction - soldering point
R
th JS
17
60
80
100
Base current
I
B
0.1
q
High collector current
q
Low collector-emitter saturation voltage
q
Complementary types: BSP 60 ... BSP 62 (PNP)
Semiconductor Group
2
BSP 50
... BSP 52
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
DC current gain
2)
I
C
= 150 mA,
V
CE
= 10 V
I
C
= 500 mA,
V
CE
= 10 V
Collector-emitter breakdown voltage
1)
I
C
= 10 mA
BSP 50
BSP 51
BSP 52
V
V
(BR)CER
45
60
80
A
Collector-emitter cutoff current
V
CE
=
V
CERmax
,
V
BE
= 0
I
CES
10
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Emitter-base breakdown voltage
I
E
= 100
A,
I
B
= 0
V
(BR)EB0
5
V
Collector-emitter saturation voltage
2)
I
C
= 500 mA,
I
B
= 0.5 mA
I
C
= 1 A,
I
B
= 1 mA
V
CEsat
1.3
1.8
h
FE
1000
2000
MHz
Transition frequency
I
C
= 100 mA,
V
CE
= 5 V,
f
= 100 MHz
f
T
200
AC characteristics
ns
ns
Switching times
I
C
= 500 mA,
I
B1
=
I
B2
= 0.5 mA
(see diagrams)
t
on
t
off
400
1500
Collector-base breakdown voltage
I
C
= 100
A,
I
B
= 0
BSP 50
BSP 51
BSP 52
V
(BR)CB0
60
80
100
Emitter-base cutoff current
V
EB
= 4 V,
I
C
= 0
I
EB0
10
Base-emitter saturation voltage
2)
I
C
= 500 mA,
I
B
= 0.5 mA
I
C
= 1 A,
I
B
= 1 mA
V
BEsat
1.9
2.2
1)
Compare
R
BE
for thermal stability.
2)
Pulse test conditions:
t
300
s,
D
= 2 %.
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