ChipFind - документация

Электронный компонент: Q62702-P1602

Скачать:  PDF   ZIP
Semiconductor Group
1
1998-08-27
Silizium-PIN-Fotodiode
NEU: in SMT und als Reverse Gullwing
Silicon PIN Photodiode
NEW: in SMT and as Reverse Gullwing
BPW 34
BPW 34 S
BPW 34 S (E9087)
Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
GEO06643
4.0
3.7
4.3
4.5
5.4
4.9
0.6
0.4
0.6
0.4
1.2
0.7
0.3
0.5
0.8
0.6
Cathode marking
0.6
0.8
1.9
2.2
3.0
3.5
0.6
0.4
Chip position
0.4
0.6
0.35
0.2
0 ... 5
5.08 mm
spacing
Approx. weight 0.1 g
1.4
Photosensitive area
2.65 mm x 2.65 mm
1.8
feo06643
BPW 34
Wesentliche Merkmale
q
Speziell geeignet fr Anwendungen
im Bereich von 400 nm bis 1100 nm
q
Kurze Schaltzeit (typ. 20 ns)
q
DIL-Plastikbauform mit hoher
Packungsdichte
q
BPW 34 S/(E9087): geeignet fr
Vapor-Phase Lten und IR-Reflow
Lten (JEDEC level 4)
Anwendungen
q
Lichtschranken fr Gleich- und
Wechsellichtbetrieb
q
IR-Fernsteuerungen
q
Industrieelektronik
q
"Messen/Steuern/Regeln"
Features
q
Especially suitable for applications from
400 nm to 1100 nm
q
Short switching time (typ. 20 ns)
q
DIL plastic package with high packing
density
q
BPW 34 S/(E9087): suitable for
vapor-phase and IR-reflow soldering
(JEDEC level 4)
Applications
q
Photointerrupters
q
IR remote controls
q
Industrial electronics
q
For control and drive circuits
BPW 34, BPW 34 S
BPW 34 S (E9087)
Semiconductor Group
2
1998-08-27
Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Typ
Type
Bestellnummer
Ordering Code
BPW 34
Q62702-P73
BPW 34 S
Q62702-P1602
BPW 34 S (E9087)
Q62702-P1790
4.5
4.3
4.0
3.7
1.5
1.7
0.9
0.7
Photosensitive area
Cathode lead
GEO06863
0.3
6.7
6.2
1.2
1.1
0...0.1
Chip position
0...5
0.2
0.1
1.1
0.9
2.65 mm x 2.65 mm
1.8
0.2
feo06862
4.5
4.3
4.0
3.7
1.5
1.7
0.9
0.7
Photosensitive area
Cathode lead
GEO06916
0.3
6.7
6.2
1.2
1.1
0...0.1
Chip position
0...5
0.2
0.1
1.1
0.9
2.65 mm x 2.65 mm
1.8
0.2
BPW34S
BPW 34 S
BPW 34 S (E9087)
BPW 34, BPW 34 S
BPW 34 S (E9087)
Semiconductor Group
3
1998-08-27
Grenzwerte
Maximum Ratings
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
T
op
;
T
stg
40 ... + 85
C
Sperrspannung
Reverse voltage
V
R
32
V
Verlustleistung,
T
A
= 25
C
Total power dissipation
P
tot
150
mW
Kennwerte (
T
A
= 25
C, Normlicht A,
T
= 2856 K)
Characteristics (
T
A
= 25
C, standard light A,
T
= 2856 K)
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Fotoempfindlichkeit,
V
R
= 5 V
Spectral sensitivity
S
80 (
50)
nA/Ix
Wellenlnge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
S max
850
nm
Spektraler Bereich der Fotoempfindlichkeit
S
= 10 % von
S
max
Spectral range of sensitivity
S
= 10 % of
S
max
400 ... 1100
nm
Bestrahlungsempfindliche Flche
Radiant sensitive area
A
7.00
mm
2
Abmessung der bestrahlungsempfindlichen
Flche
Dimensions of radiant sensitive area
L
B
L
W
2.65
2.65
mm
mm
Halbwinkel
Half angle
60
Grad
deg.
Dunkelstrom,
V
R
= 10 V
Dark current
I
R
2 (
30)
nA
Spektrale Fotoempfindlichkeit,
= 850 nm
Spectral sensitivity
S
0.62
A/W
Quantenausbeute,
= 850 nm
Quantum yield
0.90
Electrons
Photon
Leerlaufspannung,
E
v
= 1000 Ix
Open-circuit voltage
V
O
365 (
300)
mV
BPW 34, BPW 34 S
BPW 34 S (E9087)
Semiconductor Group
4
1998-08-27
Kurzschlustrom,
E
v
= 1000 Ix
Short-circuit current
I
SC
80
A
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
L
= 50
;
V
R
= 5 V;
= 850 nm;
I
p
= 800
A
t
r
,
t
f
20
ns
Durchlaspannung,
I
F
= 100 mA,
E
= 0
Forward voltage
V
F
1.3
V
Kapazitt,
V
R
= 0 V,
f
= 1 MHz,
E
= 0
Capacitance
C
0
72
pF
Temperaturkoeffizient von
V
O
Temperature coefficient of
V
O
TC
V
2.6
mV/K
Temperaturkoeffizient von
I
SC
Temperature coefficient of
I
SC
TC
I
0.18
%/K
Rauschquivalente Strahlungsleistung
Noise equivalent power
V
R
= 10 V,
= 850 nm
NEP
4.1
10
14
W
Hz
Nachweisgrenze,
V
R
= 10 V,
= 850 nm
Detection limit
D*
6.6
10
12
cm
Hz
W
Kennwerte (
T
A
= 25
C, Normlicht A,
T
= 2856 K)
Characteristics (
T
A
= 25
C, standard light A,
T
= 2856 K) (cont'd)
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
BPW 34, BPW 34 S
BPW 34 S (E9087)
Semiconductor Group
5
1998-08-27
Directional characteristics
S
rel
=
f
(
)
OHF01402
90
80
70
60
50
40
30
20
10
20
40
60
80
100
120
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
100
0
0
0
Relative spectral sensitivity
S
rel
=
f
(
)
Dark current
I
R
=
f
(
V
R
),
E
= 0
Photocurrent
I
P
=
f
(
E
v
),
V
R
= 5 V
Open-circuit voltage
V
O
=
f
(
E
v
)
Capacitance
C
=
f
(
V
R
),
f
= 1 MHz,
E
= 0
Total power dissipation
P
tot
=
f
(
T
A
)
Dark current
I
R
=
f
(
T
A
),
V
R
= 10 V,
E
= 0
OHF00078
0
rel
S
400
20
40
60
80
%
100
500 600 700 800 900
nm 1100
0
OHF00080
R
R
V
0
5
10
15
V
20
1000
2000
3000
4000
pA
E
OHF01066
V
0
10
P
-1
10
10
1
10
2
10
4
10
0
10
1
10
2
10
3
4
10
3
10
2
10
1
10
10
0
V
A
mV
P
V
O
10
3
lx
V
OHF00081
R
-2
10
C
0
-1
10
0
10
1
10
2
10
V
10
20
30
40
50
60
70
80
pF
100
T
OHF00958
A
0
tot
P
0
20
40
60
80 C 100
mW
20
40
60
80
100
120
140
160
T
OHF00082
A
-1
10
0
R
10
0
10
1
10
2
10
3
nA
20
40
60
80 C 100