Semiconductor Group
1
02.95
1300 nm Laser in Receptacle Package,
Low Power
STL 51007X
Designed for application in fiber-optic networks
Laser diode with Multi-Quantum Well structure
Suitable for bit rates up to 1 Gbit/s
Ternary photodiode at rear mirror for monitoring and
control of radiant power
Hermetically sealed subcomponents, similar to TO 18
SM Receptacle with 2- hole flange
Type
Ordering Code
Connector/Flange
STL 51007G
Q62702-P3004
FC, 2-hole
Maximum Ratings
Output power ratings refer to the SM fiber output. The operating temperature of the
submount is identical to the case temperature.
Parameter
Symbol
Values
Unit
Module
Operating temperature range at case
T
C
-
40
...
+ 85
C
Storage temperature range
T
stg
-
40
...
+ 85
C
Soldering temperature
t
max
= 10 s, 2 mm distance from bottom edge of
case
T
S
260
C
Laser Diode
Direct forward current
I
F max
120
mA
Radiant power CW
e
1
mW
Reverse voltage
V
R max
2
V
Monitor Diode
Reverse voltage
V
R max
10
V
STL 51007X
Semiconductor Group
2
Characteristics
All optical data refer to a coupled 10/125
m SM fiber,
T
C
= 25 C.
Parameter
Symbol
Values
Unit
Laser Diode
Optical output power
e
> 0.4
mW
Emission wavelength center of range
e
= 0.2 mW
1280
...
1330
nm
Spectral bandwidth
e
= 0.2 mW (RMS)
< 5
nm
Threshold current (
-
40
...
+ 85 C)
I
th
2
...
45
mA
Forward voltage
e
= 0.2 mW
V
F
< 1.5
V
Radiant power at threshold
eth
< 10
W
Slope efficiency
8
...
60
mW/A
Differential series resistance
r
S
< 8
Rise time/fall time
t
R
,
t
F
< 1
ns
Monitor Diode
Dark current,
V
R
= 5 V,
e
= 0
I
R
< 500
nA
Photocurrent,
e
= 0.2 mW
I
P
100
...
1000
A
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