Semiconductor Group
1
02.95
Ternary PIN Photodiode in TO-Package
with Integrated Optics
SRD 00212Z
InGaAs/InP - PIN-photodiode
Designed for application in fiber-optic communication
systems
Sensitive receiver for the 2
nd
and 3
rd
optical window
(1300 nm and 1500 nm)
Suitable for bit rates up to 1.2 Gbit/s
Low junction and low package capacitance
Fast switching times
Low dark current
Low noise
High reverse-current stability by planar structure
High spectral sensitivity by build in optics
Hermetically sealed 3-pin metal case
No z-adjustment necessary (optimum coupling on cap
surface)
Type
Ordering Code
Connector/Flange
SRD 00212Z
Q62702-P3010
TO, with optics
Component with other pin configuration or other package outlines (cap) on request.
Maximum Ratings
Parameter
Symbol
Values
Unit
Forward current
I
F
10
mA
Reverse voltage
V
R
20
V
Operating and storage temperature
T
A
T
stg
-
40
...
+ 85
C
Max. radiant power into the opt. port
(
V
R
= 5 V)
port
1
mW
Soldering time (wave / dip soldering), distance
between solder point and base plate
2 mm,
260 C
t
s
10
s
SRD 00212Z
Semiconductor Group
2
Characteristics
All optical data refer to an optimally coupled 10/125
m SM fiber.
Parameter
Symbol
Values
Unit
Spectral sensitivity
= 1300 nm,
V
R
= 5 V
S
0.9 (
0.8)
A/W
Change in spectral sensitivity in operating
temperature range
S
< 0.2
%/K
Rise and fall time
R
L
= 50
,
V
R
= 5 V,
= 1310 nm,
port
= 100
W
t
r
;
t
f
0.3 (
0.5)
ns
Total capacitance
V
R
= 5 V,
port
= 0,
f
= 1 MHz
C
5
1.0 (
1.5)
pF
Dark current
V
R
= 5 V,
T
A
= 85 C,
port
= 0
I
D
1 (
50)
nA
Capacitance
C
=
f
(
V
R
)
port
= 0,
f
= 1 MHz
Relative Spectral Sensitivity
V
R
= 5 V
0.1
1
10
0.1
1
10
100
Reverse Bias in V
Capacitance in pF
W avelength in nm
Sensitivity in A/W
0
0,1
0,2
0,3
0,4
0,5
0,6
0,7
0,8
0,9
1
800
1200
1600
2000
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