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Электронный компонент: Q62702-P3258

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Semiconductor Group
1 / 2
1997-11-24
Unmounted Laser Bars
SPL Bxxx
20 W cw ... 100 W qcw
Features
Unmounted monolithic linear array
High efficiency MOVPE-grown quantum well structure
Highly reliable strained layer InGa(Al)As/GaAs material
Standard wavelength selection is
3 nm, others on
request
Solderable p- and n-side metalization
Applications
Pumping of solid state lasers (Nd: YAG, Yb: YAG, ...)
Direct industrial applications (soldering, surface treatment, marking, ...)
Heating, illumination
Medical and printing application
Type
Power
Wavelength
1)
Ordering Code
SPL BG81
SPL BG94
SPL BG98
25 W .. 30 W cw
808 nm
940 nm
980 nm
Q62702-P1654
Q62702-P1733
Q62702-P3259
SPL BS79
SPL BS81
SPL BS94
50 W .. 100 W qcw
794 nm
808 nm
940 nm
Q62702-P3257
Q62702-P1719
Q62702-P3258
1) Other wavelengths in the range of 780 ... 980 nm are available on request.
SPL Bxxx
Semiconductor Group
2 / 2
1997-11-24
Characterictics
(
T
A
= 25 C)
Parameter
Symbol
Wave-
length
Typical Values
Unit
BGxx
BSxx
Recommended output
power
1)
P
opt
20 ... 30
cw
50 ... 100
qcw
W
Catastrophic optical
damage limit
1), 2)
P
COD
808nm
940nm
> 80
> 130
> 110
> 200
W
Threshold current
2)
I
th
< 11
< 17
A
Differential quantum
efficiency
2)
> 0.85
W/A
Total conversion efficiency
1)
tot
> 35
%
Beam divergence (FWHM)
||
808nm
940nm
45
12
38
12
Deg.
Standard pulse
wavelength
2), 3)
pulse
808nm
940nm
802
934
804
935
nm
Spectral width (FWHM)
< 4
nm
Fill factor
F
50
80
%
Emitter width
(Structure)
w
200
(20
3)
100
m
m
Pitch
p
400
126
m
Bar width
(Emitters per bar)
W
10.0
25
10.0
77
mm
Cavity length
L
600
m
Bar thickness
H
115
10
m
1) Depending on mounting technique, i.e. on the resulting thermal resistance.
2) Calculated from measurements on one emitter of an unmounted bar (1
s pulses at 1 kHz repetition
rate).
3) Differing pulse wavelengths are available on request.