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Электронный компонент: Q62702-P929

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Semiconductor Group
1
1998-08-27
Silizium-PIN-Fotodiode mit Tageslichtsperrfilter
NEU: in SMT und als Reverse Gullwing
Silicon PIN Photodiode with Daylight Filter
NEW: in SMT and as Reverse Gullwing
BPW 34 F
BPW 34 FS
BPW 34 FS (E9087)
Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
GEO06643
4.0
3.7
4.3
4.5
5.4
4.9
0.6
0.4
0.6
0.4
1.2
0.7
0.3
0.5
0.8
0.6
Cathode marking
0.6
0.8
1.9
2.2
3.0
3.5
0.6
0.4
Chip position
0.4
0.6
0.35
0.2
0 ... 5
5.08 mm
spacing
Approx. weight 0.1 g
1.4
Photosensitive area
2.65 mm x 2.65 mm
1.8
feo06075
BPW 34 F
Wesentliche Merkmale
q
Speziell geeignet fr Anwendungen
bei 950 nm
q
kurze Schaltzeit (typ. 20 ns)
q
DIL-Plastikbauform mit hoher
Packungsdichte
q
BPW 34 FS/(E9087); geeignet fr
Vapor-Phase Lten und IR-Reflow Lten
Anwendungen
q
IR-Fernsteuerung von Fernseh- und
Rundfunkgerten, Videorecordern,
Gertefernsteuerungen
q
Lichtschranken fr Gleich- und
Wechsellichtbetrieb
Features
q
Especially suitable for applications
of 950 nm
q
Short switching time (typ. 20 ns)
q
DIL plastic package with high packing density
q
BPW 34 FS/(E9087); suitable for vapor-
phase and IR-reflow soldering
Applications
q
IR remote control of hi-fi and TV sets,
video tape recorders, remote controls of
various equipment
q
Photointerrupters
BPW 34 F, BPW 34 FS
BPW 34 FS (E9087)
Semiconductor Group
2
1998-08-27
Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Typ
Type
Bestellnummer
Ordering Code
BPW 34 F
Q62702-P929
BPW 34 FS
Q62702-P1604
BPW 34 FS (E9087)
Q62702-P1826
4.5
4.3
4.0
3.7
1.5
1.7
0.9
0.7
Photosensitive area
Cathode lead
GEO06863
0.3
6.7
6.2
1.2
1.1
0...0.1
Chip position
0...5
0.2
0.1
1.1
0.9
2.65 mm x 2.65 mm
1.8
0.2
feo06861
feo06916
BPW 34 FAS (E9087)
BPW 34 FS
4.5
4.3
4.0
3.7
1.5
1.7
0.9
0.7
Photosensitive area
Cathode lead
GEO06916
0.3
6.7
6.2
1.2
1.1
0...0.1
Chip position
0...5
0.2
0.1
1.1
0.9
2.65 mm x 2.65 mm
1.8
0.2
BPW 34 F, BPW 34 FS
BPW 34 FS (E9087)
Semiconductor Group
3
1998-08-27
Grenzwerte
Maximum Ratings
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
T
op
;
T
stg
40 ... + 85
C
Sperrspannung
Reverse voltage
V
R
32
V
Verlustleistung,
T
A
= 25
C
Total power dissipation
P
tot
150
mW
Kennwerte (
T
A
= 25
C,
= 950 nm)
Characteristics
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Fotoempfindlichkeit
Spectral sensitivity
V
R
= 5 V,
E
e
= 1 mW/cm
2
S
50 (
40)
A
Wellenlnge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
S max
950
nm
Spektraler Bereich der Fotoempfindlichkeit
S
= 10 % von
S
max
Spectral range of sensitivity
S
= 10 % of
S
max
780 ... 1100
nm
Bestrahlungsempfindliche Flche
Radiant sensitive area
A
7.00
mm
2
Abmessung der bestrahlungsempfindlichen
Flche
Dimensions of radiant sensitive area
L
B
L
W
2.65
2.65
mm
mm
Halbwinkel
Half angle
60
Grad
deg.
Dunkelstrom,
V
R
= 10 V
Dark current
I
R
2 (
30)
nA
Spektrale Fotoempfindlichkeit
Spectral sensitivity
S
0.59
A/W
Quantenausbeute
Quantum yield
0.77
Electrons
Photon
Leerlaufspannung,
E
e
= 0.5 mW/cm
2
Open-circuit voltage
V
O
330 (
275)
mV
BPW 34 F, BPW 34 FS
BPW 34 FS (E9087)
Semiconductor Group
4
1998-08-27
Kurzschlustrom,
E
e
= 0.5 mW/cm
2
Short-circuit current
I
SC
25
A
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
L
= 50
;
V
R
= 5 V;
= 850 nm;
I
p
= 800
A
t
r
,
t
f
20
ns
Durchlaspannung,
I
F
= 100 mA,
E
= 0
Forward voltage
V
F
1.3
V
Kapazitt,
V
R
= 0 V,
f
= 1 MHz,
E
= 0
Capacitance
C
0
72
pF
Temperaturkoeffizient von
V
O
Temperature coefficient of
V
O
TC
V
2.6
mV/K
Temperaturkoeffizient von
I
SC
Temperature coefficient of
I
SC
TC
I
0.18
%/K
Rauschquivalente Strahlungsleistung
Noise equivalent power
V
R
= 10 V
NEP
4.3
10
14
W
Hz
Nachweisgrenze,
V
R
= 10 V
Detection limit
D*
6.2
10
12
cm
Hz
W
Kennwerte (
T
A
= 25
C,
= 950 nm)
Characteristics (cont'd)
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
BPW 34 F, BPW 34 FS
BPW 34 FS (E9087)
Semiconductor Group
5
1998-08-27
Directional characteristics
S
rel
=
f
(
)
OHF01402
90
80
70
60
50
40
30
20
10
20
40
60
80
100
120
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
100
0
0
0
Relative spectral sensitivity
S
rel
=
f
(
)
Dark current
I
R
=
f
(
V
R
),
E
= 0
Photocurrent
I
P
=
f
(
E
e
),
V
R
= 5 V
Open-circuit voltage
V
O
=
f
(
E
e
)
Capacitance
C
=
f
(
V
R
),
f
= 1 MHz,
E
= 0
Total power dissipation
P
tot
=
f
(
T
A
)
Dark current
I
R
=
f
(
T
A
),
V
R
= 10 V,
E
= 0
OHF00368
0
rel
S
700
20
40
60
80
%
100
nm
800
900
1000
1200
0
OHF00080
R
R
V
0
5
10
15
V
20
1000
2000
3000
4000
pA
E
OHF01097
e
0
10
P
10
1
10
2
10
4
10
-1
10
0
10
1
10
2
4
10
3
10
2
10
1
10
10
0
A
mV
P
V
O
3
10
W/cm
2
V
OHF00081
R
-2
10
C
0
-1
10
0
10
1
10
2
10
V
10
20
30
40
50
60
70
80
pF
100
T
OHF00958
A
0
tot
P
0
20
40
60
80 C 100
mW
20
40
60
80
100
120
140
160
T
OHF00082
A
-1
10
0
R
10
0
10
1
10
2
10
3
nA
20
40
60
80 C 100