Semiconductor Group
1
12/05/1997
BSS 100
SIPMOS
Small-Signal Transistor
N channel
Enhancement mode
Logic Level
V
GS(th)
= 0.8...2.0V
Pin 1
Pin 2
Pin 3
S
G
D
Type
V
DS
I
D
R
DS(on)
Package
Marking
BSS 100
100 V
0.22 A
6
TO-92
SS 100
Type
Ordering Code
Tape and Reel Information
BSS 100
Q62702-S499
E6288
BSS 100
Q62702-S007
E6296
BSS 100
Q62702-S206
E6325
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain source voltage
V
DS
100
V
Drain-gate voltage
R
GS
= 20 k
V
DGR
100
Gate source voltage
V
GS
14
Gate-source peak voltage,aperiodic
V
gs
20
Continuous drain current
T
A
= 33 C
I
D
0.22
A
DC drain current, pulsed
T
A
= 25 C
I
Dpuls
0.9
Power dissipation
T
A
= 25 C
P
tot
0.63
W
Semiconductor Group
2
12/05/1997
BSS 100
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
T
j
-55 ... + 150
C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip to ambient air
1)
R
thJA
200
K/W
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 C
V
(BR)DSS
100
-
-
V
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
0.8
1.5
2
Zero gate voltage drain current
V
DS
= 100 V,
V
GS
= 0 V,
T
j
= 25 C
V
DS
= 100 V,
V
GS
= 0 V,
T
j
= 125 C
V
DS
= 20 V,
V
GS
= 0 V,
T
j
= 25 C
I
DSS
-
-
-
1
2
0.1
10
60
1
A
nA
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
I
GSS
-
1
10
nA
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 0.22 A
V
GS
= 4.5 V,
I
D
= 0.22 A
R
DS(on)
-
-
5
3.5
10
6
Semiconductor Group
3
12/05/1997
BSS 100
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= 0.22 A
g
fs
0.08
0.22
-
S
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
iss
-
65
85
pF
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
oss
-
10
15
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
rss
-
4
6
Turn-on delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.28 A
R
G
= 50
t
d(on)
-
5
8
ns
Rise time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.28 A
R
G
= 50
t
r
-
5
8
Turn-off delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.28 A
R
G
= 50
t
d(off)
-
10
13
Fall time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.28 A
R
G
= 50
t
f
-
12
16
Semiconductor Group
4
12/05/1997
BSS 100
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
A
= 25 C
I
S
-
-
0.22
A
Inverse diode direct current,pulsed
T
A
= 25 C
I
SM
-
-
0.9
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 0.44 A
V
SD
-
0.9
1.3
V
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