Semiconductor Group
1
PNP Silicon AF and Switching Transistors
BCX 42
BSS 63
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BCX 42
BSS 63
Q62702-C1485
Q62702-S534
DKs
BMs
SOT-23
B
E
C
1
2
3
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
100
V
Collector-base voltage
V
CB0
110
Emitter-base voltage
V
EB0
5
Collector current
I
C
800
mA
Peak collector current
I
CM
1
A
Base current
I
B
100
mA
Peak base current
I
BM
200
Total power dissipation,
T
S
= 79 C
P
tot
330
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
65 ... + 150
Thermal Resistance
Junction - ambient
2)
R
th JA
285
K/W
125
125
5
BSS 63
BCX 42
Junction - soldering point
R
th JS
215
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
q
For general AF applications
q
High breakdown voltage
q
Low collector-emitter saturation voltage
q
Complementary types: BCX 41, BSS 64 (NPN)
5.91
Semiconductor Group
2
BCX 42
BSS 63
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
V
Collector-emitter breakdown voltage
I
C
= 10 mA
BCX 42
BSS 63
V
(BR)CE0
125
100
MHz
Transition frequency
I
C
= 20 mA
, V
CE
= 5 V,
f
= 20 MHz
f
T
150
pF
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
12
AC characteristics
Collector-base breakdown voltage
1)
I
C
= 100
A
BCX 42
BSS 63
V
(BR)CB0
125
110
A
Collector cutoff current
V
CE
= 100 V
T
A
= 85 C
BCX 42
T
A
= 125 C
BCX 42
I
CE0
10
75
Emitter-base breakdown voltage,
I
E
= 10
A
V
(BR)EB0
5
nA
nA
A
A
Collector cutoff current
V
CB
= 80 V
BSS 63
V
CB
= 100 V
BCX 42
V
CB
= 80 V,
T
A
= 150 C
BSS 63
V
CB
= 100 V,
T
A
= 150 C
BCX 42
I
CB0
100
100
20
20
nA
Emitter cutoff current,
V
EB
= 4 V
I
EB0
100
DC current gain
1)
I
C
= 100
A,
V
CE
= 1 V
BCX 42
I
C
= 10 mA,
V
CE
= 5 V
BSS 63
I
C
= 20 mA,
V
CE
= 5 V
BSS 63
I
C
= 100 mA,
V
CE
= 1 V
BCX 42
I
C
= 200 mA,
V
CE
= 1 V
BCX 42
h
FE
25
30
30
63
40
V
Collector-emitter saturation voltage
1)
I
C
= 300 mA,
I
B
= 30 mA
BCX 42
I
C
= 25 mA,
I
B
= 2.5 mA
BSS 63
I
C
= 75 mA,
I
B
= 7.5 mA
BSS 63
V
CEsat
0.9
0.25
0.9
Base-emitter saturation voltage
1)
I
C
= 300 mA,
I
B
= 30 mA
BCX 42
V
BEsat
1.4
1)
Pulse test:
t
300
s,
D
=
2 %
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