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Электронный компонент: Q62702-S555

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Semiconductor Group
1
NPN Silicon Switching Transistors
BSS 79
BSS 81
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BSS 79 B
BSS 79 C
BSS 81 B
BSS 81 C
Q62702-S503
Q62702-S501
Q62702-S555
Q62702-S605
CEs
CFs
CDs
CGs
SOT-23
1
2
3
B
E
C
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
Parameter
Symbol
BSS 79
Unit
Collector-emitter voltage
V
CE0
40
V
Collector-base voltage
V
CB0
Emitter-base voltage
V
EB0
Collector current
I
C
mA
Base current
I
B
mA
Total power dissipation,
T
S
= 77 C
P
tot
mW
Junction temperature
T
j
C
Storage temperature range
T
stg
65 ... + 150
Thermal Resistance
Junction - ambient
2)
R
th JA
290
K/W
Peak collector current
I
CM
A
Peak base current
I
BM
BSS 81
35
800
100
330
150
1
200
Values
75
Junction - soldering point
R
th JS
220
6
q
High DC current gain
q
Low collector-emitter saturation voltage
q
Complementary types: BSS 80, BSS 82 (PNP)
5.91
Semiconductor Group
2
BSS 79
BSS 81
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Base-emitter saturation voltage
1)
I
C
= 150 mA,
I
B
= 15 mA
I
C
= 500 mA,
I
B
= 50 mA
Collector-emitter saturation voltage
1)
I
C
= 150 mA,
I
B
= 15 mA
I
C
= 500 mA,
I
B
= 50 mA
DC current gain
I
C
= 100
A,
V
CE
= 10 V
BSS 79 B/81 B
BSS 79 C/81 C
I
C
= 1 mA,
V
CE
= 10 V
BSS 79 B/81 B
BSS 79 C/81 C
I
C
= 10 mA,
V
CE
= 10 V
1)
BSS 79 B/81 B
BSS 79 C/81 C
I
C
= 150 mA,
V
CE
= 10 V
1)
BSS 79 B/81 B
BSS 79 C/81 C
I
C
= 500 mA,
V
CE
= 10 V
1)
BSS 79 B/81 B
BSS 79 C/81 C
V
Collector-emitter breakdown voltage
I
C
= 10 mA
BSS 79
BSS 81
V
(BR)CE0
40
35


Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 10
A
V
(BR)CB0
75
Emitter-base breakdown voltage
I
E
= 10
A
V
(BR)EB0
6
nA
Emitter-base cutoff current
V
EB
= 3 V
I
EB0
10
nA
A
Collector-base cutoff current
V
CB
= 60 V
V
CB
= 60 V,
T
A
= 150 C
I
CB0


10
10
h
FE
20
35
25
50
35
75
40
100
25
40















120
300

V
V
CEsat


0.3
1.3
V
BEsat


1.2
2.0
1)
Pulse test conditions:
t
300
s,
D
= 2 %.
Semiconductor Group
3
BSS 79
BSS 81
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Test circuits
Delay and rise time
Storage and fall time
Oscillograph:
R > 100 k
C < 12 pF
t
r
< 5 ns
MHz
Transition frequency
I
C
= 20 mA,
V
CE
= 20 V,
f
= 100 MHz
f
T
250
AC characteristics
pF
Open-circuit output capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
6
Unit
Values
Parameter
Symbol
min.
typ.
max.
ns
ns
ns
ns
V
CC
= 30 V,
I
C
= 150 mA
,
I
B1
=
I
B2
= 15 mA,
V
BE
= 0.5 V
Delay time
Rise time
Storage time
Fall time
t
d
t
r
t
stg
t
f






10
25
250
60
Semiconductor Group
4
BSS 79
BSS 81
Total power dissipation
P
tot
=
f
(
T
A
*;
T
S
)
* Package mounted on epoxy
Permissible pulse load
P
tot max
/
P
tot DC
=
f
(
t
p
)
Collector-base capacitance
C
cb
=
f
(
V
CB
)
f
= 1 MHz
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 20 V
Semiconductor Group
5
BSS 79
BSS 81
Saturation voltage
I
C
=
f
(
V
BE sat
)
h
FE
= 10
I
C
=
f
(
V
CE sat
)
Delay time
t
d
=
f
(
I
C
)
Rise time
t
r
=
f
(
I
C
)
DC current gain
h
FE
=
f
(
I
C
)
V
CE
= 10 V
Storage time
t
stg
=
f
(
I
C
)
Fall time
t
f
=
f
(
I
C
)