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Электронный компонент: Q62702-S568

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Semiconductor Group
1
18/02/1997
BSS 84
SIPMOS
Small-Signal Transistor
P channel
Enhancement mode
Logic Level
V
GS(th)
= -0.8...-2.0 V
Pin 1
Pin 2
Pin 3
G
S
D
Type
V
DS
I
D
R
DS(on)
Package
Marking
BSS 84
-50 V
-0.13 A
10
SOT-23
SPs
Type
Ordering Code
Tape and Reel Information
BSS 84
Q62702-S568
E6327
BSS 84
Q67000-S243
E6433
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain source voltage
V
DS
-50
V
Drain-gate voltage
R
GS
= 20 k
V
DGR
-50
Gate source voltage
V
GS
20
Continuous drain current
T
A
= 30 C
I
D
-0.13
A
DC drain current, pulsed
T
A
= 25 C
I
Dpuls
-0.52
Power dissipation
T
A
= 25 C
P
tot
0.36
W
Semiconductor Group
2
18/02/1997
BSS 84
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
T
j
-55 ... + 150
C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip to ambient air
1)
R
thJA
350
K/W
Therminal resistance, chip-substrate- reverse side
1)
R
thJSR
285
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= -0.25 mA,
T
j
= 25 C
V
(BR)DSS
-50
-
-
V
Gate threshold voltage
V
GS=
V
DS,
I
D
= -1 mA
V
GS(th)
-0.8
-1.5
-2
Zero gate voltage drain current
V
DS
= -50 V,
V
GS
= 0 V,
T
j
= 25 C
V
DS
= -50 V,
V
GS
= 0 V,
T
j
= 125 C
V
DS
= -25 V,
V
GS
= 0 V,
T
j
= 25 C
I
DSS
-
-
-
-
-2
-0.1
-0.1
-60
-1
A
Gate-source leakage current
V
GS
= -20 V,
V
DS
= 0 V
I
GSS
-
-1
-10
nA
Drain-Source on-state resistance
V
GS
= -10 V,
I
D
= -0.13 A
R
DS(on)
-
5
10
Semiconductor Group
3
18/02/1997
BSS 84
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= -0.13 A
g
fs
0.05
0.085
-
S
Input capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f = 1 MHz
C
iss
-
30
40
pF
Output capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f = 1 MHz
C
oss
-
17
25
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f = 1 MHz
C
rss
-
8
12
Turn-on delay time
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -0.27 A
R
GS
= 50
t
d(on)
-
7
10
ns
Rise time
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -0.27 A
R
GS
= 50
t
r
-
12
18
Turn-off delay time
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -0.27 A
R
GS
= 50
t
d(off)
-
10
13
Fall time
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -0.27 A
R
GS
= 50
t
f
-
20
27
Semiconductor Group
4
18/02/1997
BSS 84
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
A
= 25 C
I
S
-
-
-0.13
A
Inverse diode direct current,pulsed
T
A
= 25 C
I
SM
-
-
-0.52
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= -0.26 A,
T
j
= 25 C
V
SD
-
-0.9
-1.2
V
Semiconductor Group
5
18/02/1997
BSS 84
Power dissipation
P
tot
=
(
T
A
)
0
20
40
60
80
100
120
C
160
T
A
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.28
0.32
W
0.40
P
tot
Drain current
I
D
=
(
T
A
)
parameter:
V
GS
-10 V
0
20
40
60
80
100
120
C
160
T
A
0.00
-0.01
-0.02
-0.03
-0.04
-0.05
-0.06
-0.07
-0.08
-0.09
-0.10
-0.11
-0.12
A
-0.14
I
D
Safe operating area
I
D
=f(
V
DS
)
parameter :
D = 0.01, T
C
=25C
Drain-source breakdown voltage
V
(BR)DSS
=
(
T
j
)
-60
-20
20
60
100
C
160
T
j
-45
-46
-47
-48
-49
-50
-51
-52
-53
-54
-55
-56
-57
-58
V
-60
V
(BR)DSS
Semiconductor Group
6
18/02/1997
BSS 84
Typ. output characteristics
I
D
=
(
V
DS
)
parameter:
t
p
= 80 s ,
T
j
= 25 C
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
V
-5.0
V
DS
0.00
-0.02
-0.04
-0.06
-0.08
-0.10
-0.12
-0.14
-0.16
-0.18
-0.20
-0.22
-0.24
-0.26
A
-0.30
I
D
V
GS
[V]
a
a
-2.0
b
b
-2.5
c
c
-3.0
d
d
-3.5
e
e
-4.0
f
f
-4.5
g
g
-5.0
h
h
-6.0
i
i
-7.0
j
j
-8.0
k
k
-9.0
l
P
tot
= 0W
l
-10.0
Typ. drain-source on-resistance
R
DS (on)
=
(
I
D
)
parameter:
t
p
= 80 s,
T
j
= 25 C
0.00
-0.04
-0.08
-0.12
-0.16
A
-0.24
I
D
0
4
8
12
16
20
24
32
R
DS (on)
V
GS
[V] =
a
-2.0
V
GS
[V] =
a
a
-2.5
b
b
-3.0
c
c
-3.5
d
d
-4.0
e
e
-4.5
f
f
-5.0
g
g
-6.0
h
h
-7.0
i
i
-8.0
j
j
-9.0
k
k
-10.0
Typ. transfer characteristics
I
D
= f(V
GS
)
parameter:
t
p
= 80 s
V
DS
2 x
I
D
x
R
DS(on)max
0
-1
-2
-3
-4
-5
-6
-7
-8
V
-10
V
GS
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
A
-0.9
I
D
Typ. forward transconductance
g
fs
=
f (I
D
)
parameter:
t
p
= 80 s,
V
DS
2 x
I
D
x
R
DS(on)max
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
A
-0.8
I
D
0.00
0.02
0.04
0.06
0.08
0.10
0.12
S
0.16
g
fs
7
18/02/1997
Semiconductor Group
BSS 84
Drain-source on-resistance
R
DS (on)
=
(
T
j
)
parameter:
I
D
= -0.13 A,
V
GS
= -10 V
-60
-20
20
60
100
C
160
T
j
0
2
4
6
8
10
12
14
16
18
20
22
26
R
DS (on)
typ
98%
Gate threshold voltage
V
GS (th)
=
(
T
j
)
parameter:
V
GS
=
V
DS
,
I
D
= -1 mA
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-3.2
-3.6
-4.0
V
-4.6
V
GS(th)
-60
-20
20
60
100
C
160
T
j
2%
typ
98%
Typ. capacitances
C = f (V
DS
)
parameter:
V
GS
=0V,
f = 1 MHz
0
-5
-10
-15
-20
-25
-30
V
-40
V
DS
0
10
1
10
2
10
3
10
pF
C
C
rss
C
oss
C
iss
Forward characteristics of reverse diode
I
F
=
(
V
SD
)
parameter:
T
j
, t
p
= 80 s
-3
-10
-2
-10
-1
-10
0
-10
A
I
F
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
V
-3.0
V
SD
T
j
= 25 C typ
T
j
= 25 C (98%)
T
j
= 150 C typ
T
j
= 150 C (98%)