Semiconductor Group
1
12/05/1997
BSS 98
SIPMOS
Small-Signal Transistor
N channel
Enhancement mode
Logic Level
V
GS(th)
= 0.8...1.6 V
Pin 1
Pin 2
Pin 3
S
G
D
Type
V
DS
I
D
R
DS(on)
Package
Marking
BSS 98
50 V
0.3 A
3.5
TO-92
SS98
Type
Ordering Code
Tape and Reel Information
BSS 98
Q62702-S053
E6288
BSS 98
Q62702-S517
E6296
BSS 98
Q62702-S635
E6325
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain source voltage
V
DS
50
V
Drain-gate voltage
R
GS
= 20 k
V
DGR
50
Gate source voltage
V
GS
14
Gate-source peak voltage,aperiodic
V
gs
20
Continuous drain current
T
A
= 25 C
I
D
0.3
A
DC drain current, pulsed
T
A
= 25 C
I
Dpuls
1.2
Power dissipation
T
A
= 25 C
P
tot
0.63
W
Semiconductor Group
2
12/05/1997
BSS 98
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
T
j
-55 ... + 150
C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip to ambient air
1)
R
thJA
200
K/W
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 C
V
(BR)DSS
50
-
-
V
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
0.8
1.2
1.6
Zero gate voltage drain current
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 25 C
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 125 C
V
DS
= 30 V,
V
GS
= 0 V,
T
j
= 25 C
I
DSS
-
-
-
-
-
0.05
100
5
0.5
A
nA
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
I
GSS
-
10
100
nA
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 0.3 A
V
GS
= 4.5 V,
I
D
= 0.3 A
R
DS(on)
-
-
2.8
1.8
6
3.5
Semiconductor Group
3
12/05/1997
BSS 98
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= 0.3 A
g
fs
0.12
0.23
-
S
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
iss
-
40
55
pF
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
oss
-
15
25
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
rss
-
5
8
Turn-on delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.29 A
R
G
= 50
t
d(on)
-
5
8
ns
Rise time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.29 A
R
G
= 50
t
r
-
6
9
Turn-off delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.29 A
R
G
= 50
t
d(off)
-
12
16
Fall time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.29 A
R
G
= 50
t
f
-
15
20
Semiconductor Group
4
12/05/1997
BSS 98
Electrical Characteristics, at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
A
= 25 C
I
S
-
-
0.3
A
Inverse diode direct current,pulsed
T
A
= 25 C
I
SM
-
-
1.2
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 0.6 A
V
SD
-
1
1.4
V
Semiconductor Group
5
12/05/1997
BSS 98
Power dissipation
P
tot
=
(T
A
)
0
20
40
60
80
100
120
C
160
T
A
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
W
0.70
P
tot
Drain current
I
D
=
(T
A
)
parameter: V
GS
10 V
0
20
40
60
80
100
120
C
160
T
A
0.00
0.04
0.08
0.12
0.16
0.20
0.24
A
0.32
I
D
Safe operating area I
D
=f(V
DS
)
parameter : D = 0.01, T
C
=25C
Drain-source breakdown voltage
V
(BR)DSS
=
(T
j
)
-60
-20
20
60
100
C
160
T
j
45
46
47
48
49
50
51
52
53
54
55
56
57
58
V
60
V
(BR)DSS
Semiconductor Group
6
12/05/1997
BSS 98
Typ. output characteristics
I
D
=
(
V
DS
)
parameter: t
p
= 80 s , T
j
= 25 C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
5.0
V
DS
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
A
0.70
I
D
V
GS
[V]
a
a
2.0
b
b
2.5
c
c
3.0
d
d
3.5
e
e
4.0
f
f
4.5
g
g
5.0
h
h
6.0
i
i
7.0
j
j
8.0
k
k
9.0
l
P
tot
= 1W
l
10.0
Typ. drain-source on-resistance
R
DS (on)
=
(
I
D
)
parameter: t
p
= 80 s, T
j
= 25 C
0.00
0.10
0.20
0.30
0.40
A
0.60
I
D
0
1
2
3
4
5
6
7
8
9
11
R
DS (on)
V
GS
[V] =
a
a
2.0
b
b
2.5
c
c
3.0
d
d
3.5
e
e
4.0
f
f
4.5
g
g
5.0
h
h
6.0
i
i
7.0
j
j
8.0
k
k
9.0
l
l
10.0
Typ. transfer characteristics
I
D
= f
(
V
GS
)
parameter:
t
p
= 80 s
V
DS
2 x
I
D
x
R
DS(on)max
0
1
2
3
4
5
6
7
8
V
10
V
GS
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
A
0.65
I
D
Typ. forward transconductance
g
fs
=
f
(
I
D
)
parameter:
t
p
= 80 s,
V
DS
2 x
I
D
x
R
DS(on)max
0.00
0.10
0.20
0.30
0.40
A
0.55
I
D
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.22
0.24
0.26
S
0.30
g
fs
7
12/05/1997
Semiconductor Group
BSS 98
Drain-source on-resistance
R
DS (on)
=
(T
j
)
parameter: I
D
= 0.3 A, V
GS
= 10 V
-60
-20
20
60
100
C
160
T
j
0
1
2
3
4
5
6
7
9
R
DS (on)
typ
98%
Gate threshold voltage
V
GS (th)
=
(T
j
)
parameter: V
GS
= V
DS
, I
D
= 1 mA
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
V
2.6
V
GS(th)
-60
-20
20
60
100
C
160
T
j
2%
typ
98%
Typ. capacitances
C
=
f
(
V
DS
)
parameter:
V
GS
=0V,
f
= 1 MHz
0
5
10
15
20
25
30
V
40
V
DS
0
10
1
10
2
10
3
10
pF
C
C
rss
C
oss
C
iss
Forward characteristics of reverse diode
I
F
=
(V
SD
)
parameter: T
j
, t
p
= 80 s
-2
10
-1
10
0
10
1
10
A
I
F
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
V
SD
T
j
= 25 C typ
T
j
= 25 C (98%)
T
j
= 150 C typ
T
j
= 150 C (98%)
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