Semiconductor Group
1
Silicon PIN Diodes
BXY 43
Maximum Ratings
Type
Ordering Code
Marking
Package
1)
Pin Configuration
BXY 43A
Q62702-X116
T1
BXY 43B
Q62702-X104
Cathode: black dot,
BXY 43C
Q62702-X105
Parameter
Symbol
Unit
Breakdown voltage
V
(BR)
150
V
Peak forward current,
t
p
=1
s
I
FRM
10
A
Junction temperature
T
j
175
C
Storage temperature range
T
stg
Total power dissipation
P
tot
500
mW
Operating temperature range
T
op
Thermal Resistance
Junction - case
R
th JC
80
K/W
Forward current
I
F
400
mA
Values
150
20
600
70
500
150
20
600
70
500
BXY 43A
BXY 43B
BXY 43C
55 ... + 150
55 ... + 150
1)
For detailed information see chapter Package Outlines.
q
High-speed switching
q
Phase shifting up to 10 GHz
q
Power splitter
Semiconductor Group
2
BXY 43
BXY 43
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC Characteristics
nA
Reverse current
V
R
= 100 V
I
R
5
pF
Diode capacitance
V
R
= 50 V
, f
= 1 MHz
BXY 43A
BXY 43B
BXY 43C
C
T
0.19
0.25
0.35
0.20
0.28
0.40
V
Forward voltage
I
F
= 100 mA
V
F
1
AC Characteristics
Forward resistance
I
F
= 10 mA,
f
= 100 MHz
BXY 43A
BXY 43B
BXY 43C
r
f
1.2
1.0
1.0
ns
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA
BXY 43A
BXY 43B
BXY 43C
L
250
350
350
Storage time
I
F
= 10 mA,
V
R
= 10 V
BXY 43A
BXY 43B
BXY 43C
t
s
15
20
25
nH
Case series inductance
L
s
0.3
A
Preaging at forward current
for 168 hours
BXY 43A
BXY 43B
BXY 43C
I
L
0.2
0.2
0.5
torr.1
s
Gross and fine leakage test
10
8
PDF 
ZIP