Semiconductor Group
1
Silicon PIN Diode
BXY 42BA-3
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings
Type
Ordering Code
Marking
Package
1)
Pin Configuration
BXY 42BA-3
Q62702-X143
T1
Cathode: black dot,
heat sink
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
50
V
Peak forward current,
t
p
=1
s
I
FRM
5
A
Junction temperature
T
j
175
C
Storage temperature range
T
stg
55 ... + 150
Total power dissipation
P
tot
350
mW
Operating temperature range
T
op
55 ... + 150
Thermal Resistance
Junction - ambient
R
th JA
450
K/W
1)
For detailed information see chapter Package Outlines.
q
Fast switching
q
In stripline package other lead configurations available
Semiconductor Group
2
BXY 42BA-3
BXY 42BA-3
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
V
Breakdown voltage
I
R
= 10
A
V
(BR)
50
nA
Reverse current
V
R
= 40 V
I
R
5
ns
Storage time
I
F
= 10 mA,
V
R
= 10 V
t
s
4
pF
Diode capacitance
V
R
= 20 V
, f
= 1 MHz
C
T
0.24
ns
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA
L
40
Forward resistance
f
= 100 MHz,
I
F
= 10 mA
r
f
1.5
PDF 
ZIP