Semiconductor Group
1
Silicon PIN Diode
BXY 44K
Maximum Ratings
Type
Ordering Code
Marking
Package
1)
Pin Configuration
BXY 44K
Q62702-X148
T1
Cathode: black dot,
heat sink
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
200
V
Peak forward current,
t
p
=1
s
I
FRM
20
Junction temperature
T
j
175
C
Storage temperature range
T
stg
65 ... + 150
Total power dissipation
P
tot
600
mW
Operating temperature range
T
op
65 ... + 150
Forward current
I
F
0.5
A
1)
For detailed information see chapter Package Outlines.
q
Microwave attenuator diode
q
Linear RF characteristic
Semiconductor Group
2
BXY 44K
BXY 44K
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
V
Breakdown voltage
I
R
= 10
A
V
(BR)
200
nA
Reverse current
V
R
= 100 V
I
R
10
ns
Storage time
I
F
= 10 mA,
V
R
= 10 V
t
s
50
pF
Diode capacitance
V
R
= 50 V
, f
= 1 MHz
C
T
0.4
Forward resistance
f
= 100 MHz,
I
F
= 10
A
f
= 100 MHz,
I
F
= 1 mA
f
= 100 MHz,
I
F
= 10 mA
r
f
1000
25
3.5
s
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA
L
0.5
Forward voltage
I
R
= 100 mA
V
F
1
Case capacitance
C
C
0.1
PDF 
ZIP